Yan-xu ZHU, Yan-xu ZHU, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, Tie-fan HU. Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices[J]. Acta Photonica Sinica, 2020, 49(6): 0604002
- Acta Photonica Sinica
- Vol. 49, Issue 6, 0604002 (2020)
Fig. 1. Schematic diagram of PZT preparation structure
Fig. 2. SEM morphologies
Fig. 3. XRD analysis chart of different growth conditions
Fig. 4. Analysis of hysteresis loops for different growth conditions
Fig. 5. Schematic diagram of the PZT/GaN-based HEMT detector structure
Fig. 6. Illustration of the steps relevant to the fabrication of the grating electrode GaN-based HEMT device structure
Fig. 7. Dark and UV light output characteristic curves for the tested GaN-based HEMT devices
Fig. 8. Optical micrograph of the three kinds of different gate length devices
Fig. 9. Characteristic curves of the three different gate length devices
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Table 1. PZT film experimental sample process parameters
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Table 2. Annealing process parameters
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Table 3. Parameter results of Fig. 4(a)
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Table 4. Parameter results of Fig. 4(b)
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Table 5. Device structure parameters for the three different gate lengths
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