• Journal of Semiconductors
  • Vol. 46, Issue 4, 042104 (2025)
Napasuda Wichaiyo1, Yuyao Wei1,*, Chao Ding1,**, Guozheng Shi1..., Witoon Yindeesuk2, Liang Wang1, Huān Bì1, Jiaqi Liu1, Shuzi Hayase1, Yusheng Li1, Yongge Yang1 and Qing Shen1,***|Show fewer author(s)
Author Affiliations
  • 1Graduate School of Engineering Science, the University of Electro-Communications, Tokyo 1828585, Japan
  • 2School of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand
  • show less
    DOI: 10.1088/1674-4926/25030003 Cite this Article
    Napasuda Wichaiyo, Yuyao Wei, Chao Ding, Guozheng Shi, Witoon Yindeesuk, Liang Wang, Huān Bì, Jiaqi Liu, Shuzi Hayase, Yusheng Li, Yongge Yang, Qing Shen. Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells[J]. Journal of Semiconductors, 2025, 46(4): 042104 Copy Citation Text show less
    (Color online) (a) The Hall coefficient varies mixing SnI2 level from 0%−3% (the dots show average values, and the error bars represent the top and lower margins of the 95% confidence interval). (b) Energy band diagram of ZMO film, of PbS–PbX2 film, PbS–PbX2/SnI2 1% film, PbS–PbX2/SnI2 2% film, PbS–PbX2/SnI2 3%, and PbS–EDT film, (c) XPS spectra Sn 3d region, and (d) XPS spectra Pb 4f region of PbS–PbX2 film, PbS–PbX2/SnI2 1% film, PbS–PbX2/SnI2 2% film, and PbS–PbX2/SnI2 3% film.
    Fig. 1. (Color online) (a) The Hall coefficient varies mixing SnI2 level from 0%−3% (the dots show average values, and the error bars represent the top and lower margins of the 95% confidence interval). (b) Energy band diagram of ZMO film, of PbS–PbX2 film, PbS–PbX2/SnI2 1% film, PbS–PbX2/SnI2 2% film, PbS–PbX2/SnI2 3%, and PbS–EDT film, (c) XPS spectra Sn 3d region, and (d) XPS spectra Pb 4f region of PbS–PbX2 film, PbS–PbX2/SnI2 1% film, PbS–PbX2/SnI2 2% film, and PbS–PbX2/SnI2 3% film.
    (Color online) X-ray pattern of PbS–PbX2 films without and with SnI2 mixing.
    Fig. 2. (Color online) X-ray pattern of PbS–PbX2 films without and with SnI2 mixing.
    (Color online) J–V characteristics of champion control device (PbS–EDT HTL) and target device (p-type PbS CQD ink HTL) at (a) the fresh state, and (b) after 4 weeks storage.
    Fig. 3. (Color online) J–V characteristics of champion control device (PbS–EDT HTL) and target device (p-type PbS CQD ink HTL) at (a) the fresh state, and (b) after 4 weeks storage.
    (Color online) The stability test of (a) Jsc, (b) Voc, (c) FF, and (d) PCE for the devices stored in ambient condition.
    Fig. 4. (Color online) The stability test of (a) Jsc, (b) Voc, (c) FF, and (d) PCE for the devices stored in ambient condition.
    Napasuda Wichaiyo, Yuyao Wei, Chao Ding, Guozheng Shi, Witoon Yindeesuk, Liang Wang, Huān Bì, Jiaqi Liu, Shuzi Hayase, Yusheng Li, Yongge Yang, Qing Shen. Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells[J]. Journal of Semiconductors, 2025, 46(4): 042104
    Download Citation