Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells

Napasuda Wichaiyo; Yuyao Wei; Chao Ding; Guozheng Shi; Witoon Yindeesuk; Liang Wang; Huān Bì; Jiaqi Liu; Shuzi Hayase; Yusheng Li; Yongge Yang; Qing Shen

doi:10.1088/1674-4926/25030003

Journals >Journal of Semiconductors >Volume 46 >Issue 4 >Page 042104 > Article

Journal of Semiconductors
Vol. 46, Issue 4, 042104 (2025)

Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells

Napasuda Wichaiyo¹, Yuyao Wei^1,*, Chao Ding^1,**, Guozheng Shi¹..., Witoon Yindeesuk², Liang Wang¹, Huān Bì¹, Jiaqi Liu¹, Shuzi Hayase¹, Yusheng Li¹, Yongge Yang¹ and Qing Shen^1,***|Show fewer author(s)

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¹Graduate School of Engineering Science, the University of Electro-Communications, Tokyo 1828585, Japan

²School of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand

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DOI: 10.1088/1674-4926/25030003 Cite this Article

Napasuda Wichaiyo, Yuyao Wei, Chao Ding, Guozheng Shi, Witoon Yindeesuk, Liang Wang, Huān Bì, Jiaqi Liu, Shuzi Hayase, Yusheng Li, Yongge Yang, Qing Shen. Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells[J]. Journal of Semiconductors, 2025, 46(4): 042104 Copy Citation Text

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(Color online) (a) The Hall coefficient varies mixing SnI2 level from 0%−3% (the dots show average values, and the error bars represent the top and lower margins of the 95% confidence interval). (b) Energy band diagram of ZMO film, of PbS–PbX2 film, PbS–PbX2/SnI2 1% film, PbS–PbX2/SnI2 2% film, PbS–PbX2/SnI2 3%, and PbS–EDT film, (c) XPS spectra Sn 3d region, and (d) XPS spectra Pb 4f region of PbS–PbX2 film, PbS–PbX2/SnI2 1% film, PbS–PbX2/SnI2 2% film, and PbS–PbX2/SnI2 3% film.

Fig. 1. (Color online) (a) The Hall coefficient varies mixing SnI₂ level from 0%−3% (the dots show average values, and the error bars represent the top and lower margins of the 95% confidence interval). (b) Energy band diagram of ZMO film, of PbS–PbX₂ film, PbS–PbX₂/SnI₂ 1% film, PbS–PbX₂/SnI₂ 2% film, PbS–PbX₂/SnI₂ 3%, and PbS–EDT film, (c) XPS spectra Sn 3d region, and (d) XPS spectra Pb 4f region of PbS–PbX₂ film, PbS–PbX₂/SnI₂ 1% film, PbS–PbX₂/SnI₂ 2% film, and PbS–PbX₂/SnI₂ 3% film.

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(Color online) X-ray pattern of PbS–PbX2 films without and with SnI2 mixing.

Fig. 2. (Color online) X-ray pattern of PbS–PbX₂ films without and with SnI₂ mixing.

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Fig. 3. (Color online) J–V characteristics of champion control device (PbS–EDT HTL) and target device (p-type PbS CQD ink HTL) at (a) the fresh state, and (b) after 4 weeks storage.

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Fig. 4. (Color online) The stability test of (a) J_sc, (b) V_oc, (c) FF, and (d) PCE for the devices stored in ambient condition.

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Napasuda Wichaiyo, Yuyao Wei, Chao Ding, Guozheng Shi, Witoon Yindeesuk, Liang Wang, Huān Bì, Jiaqi Liu, Shuzi Hayase, Yusheng Li, Yongge Yang, Qing Shen. Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells[J]. Journal of Semiconductors, 2025, 46(4): 042104

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