Napasuda Wichaiyo, Yuyao Wei, Chao Ding, Guozheng Shi, Witoon Yindeesuk, Liang Wang, Huān Bì, Jiaqi Liu, Shuzi Hayase, Yusheng Li, Yongge Yang, Qing Shen. Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells[J]. Journal of Semiconductors, 2025, 46(4): 042104

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- Vol. 46, Issue 4, 042104 (2025)

Fig. 1. (Color online) (a) The Hall coefficient varies mixing SnI2 level from 0%−3% (the dots show average values, and the error bars represent the top and lower margins of the 95% confidence interval). (b) Energy band diagram of ZMO film, of PbS–PbX2 film, PbS–PbX2/SnI2 1% film, PbS–PbX2/SnI2 2% film, PbS–PbX2/SnI2 3%, and PbS–EDT film, (c) XPS spectra Sn 3d region, and (d) XPS spectra Pb 4f region of PbS–PbX2 film, PbS–PbX2/SnI2 1% film, PbS–PbX2/SnI2 2% film, and PbS–PbX2/SnI2 3% film.

Fig. 2. (Color online) X-ray pattern of PbS–PbX2 films without and with SnI2 mixing.

Fig. 3. (Color online) J–V characteristics of champion control device (PbS–EDT HTL) and target device (p-type PbS CQD ink HTL) at (a) the fresh state, and (b) after 4 weeks storage.

Fig. 4. (Color online) The stability test of (a) Jsc, (b) Voc, (c) FF, and (d) PCE for the devices stored in ambient condition.

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