• Microelectronics
  • Vol. 51, Issue 3, 363 (2021)
PENG Xiong1, XU Hua2, LIU Tao2, CHEN Kun2, QIAO Zhe1, and YUAN Bo2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.200519 Cite this Article
    PENG Xiong, XU Hua, LIU Tao, CHEN Kun, QIAO Zhe, YUAN Bo. Optimization Design of an ESD Protection Strategy in RF Circuits[J]. Microelectronics, 2021, 51(3): 363 Copy Citation Text show less
    References

    [1] LIN C Y, HUANG G L, LIN M T, et al. Compact ESD protection design for CMOS low-noise amplifier [J]. IEEE Trans Elec Dev, 2020, 67(1): 35-39.

    [2] KING Y C, DAI S H, LIN C J. Leakage suppression of low-voltage transient voltage suppressor [J]. IEEE Trans Elec Dev, 2008, 55(1): 206-210.

    [3] WANG K, QIU L, WANG Z. 69-78 GHz ESD-protected SiGe BiCMOS PA with 30 dB automatic level control for mm-wave 5G applications [J]. Elec Lett, 2018, 54(22): 1286-1288.

    [4] KER M D, LIN C Y, HSIAO Y W. Overview on ESD protection designs of low-parasitic capacitance for RF ICs in CMOS technologies [J]. IEEE Trans Dev Mater Reliab, 2011, 11(2): 207-218.

    [5] CUI Q, SALCEDO A, PARTHASARATHY S, et al. High-robustness and low-capacitance silicon-controlled rectifier for high-speed I/O ESD protection [J]. IEEE Elec Dev Lett, 2013, 34(2): 178-180.

    [6] JOSHI S, HYVONEN S, ROSENBAUM E. High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins [J]. IEEE Trans Elec Dev, 2005, 52(7): 1484-1488.

    [7] QI Z, QIAO M, LIANG L, et al. Mix-mode forward-biased diode with low clamping voltage for robust ESD applications [J]. Elec Lett, 2020, 56(8): 398-400.

    [8] HYVONEN S, JOSHI S, ROSENBAUM E. Comprehensive ESD protection for RF inputs [J]. Microelec Reliab, 2004, 45(2): 245-254.

    PENG Xiong, XU Hua, LIU Tao, CHEN Kun, QIAO Zhe, YUAN Bo. Optimization Design of an ESD Protection Strategy in RF Circuits[J]. Microelectronics, 2021, 51(3): 363
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