SURFACE DEFECTS ON MBE GROWN HgCdTe

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[1] de Lyon T J, Rajavel D R, Vifil J A, et al. Molecular beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared application. J. Electronic Materials, 1998,27:550

[2] Wijewarnasuriya P S, Zandian M, Young D B, et al. Microscopic defects on MBE LWIR HgCdTe material and their impact on device. J.Electronic Materials, 1999,28:649

[3] Arias J M, Aandian M, Bajaj j, et al. Molecular beam epitaxy HgCdTe growth-induced void defects and their effect on infrared photodiodes. J.Electronic Materials, 1995,24:521

[4] Zandian M, Arias J M, Bajaj J, et al. Origin of void defects in Hg1-xCdxTe grown in by molecular beam epitaxy. J.Electronic Materials, 1995,24:1207

[5] Changdra D, Shin H D, Aqariden F, et al. Formation and control of defects during molecular beam epitaxial growth of HgCdTe. J.Electronic Materials, 1998, 27:521

[6] Bajaj J, Arias J M, Zandian M, et al. Uniform low defect density molecular beam epitaxial HgCdTe. J.Electronic Materials, 1996,25:1394

[7] Berding M A, Sher A, Van Shilfgaared M. Defect modeling studies in HgCdTe and CdTe. J.Electronic Materials, 1995,24:1127

[8] He L, Yang J R, Wang S L, et al. A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe. J.Cryst.Growth,1997,175/176:677

[10] Edwall D D, Zandian M, Chen A C, et al, Improving material characteristics and reproducibility of MBE HgCdTe. J.Electronic Materials,1997,26:493