SURFACE DEFECTS ON MBE GROWN HgCdTe

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 20 >Issue 6 >Page 406 > Article

Journal of Infrared and Millimeter Waves
Vol. 20, Issue 6, 406 (2001)

SURFACE DEFECTS ON MBE GROWN HgCdTe

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. SURFACE DEFECTS ON MBE GROWN HgCdTe[J]. Journal of Infrared and Millimeter Waves, 2001, 20(6): 406 Copy Citation Text

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Abstract

The surface defects on MBE grown HgCdTe films on GaAs substrates were studied. The mechanism of surface defect formation was analyzed by SEM observations. The optimal growth conditions for obtaining a good morphological surface were determined. It was found that a variety of surface defects on epilayers are related to the HgCdTe growth conditions and the substrate surface treatment. The average density of surface defects (larger than 2 μm) for HgCdTe epilayers was obtained to be 300 cm -2 , and the yield was 65%.

Keywords

HgCdTe surface defects.HgCdTe MBE

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. SURFACE DEFECTS ON MBE GROWN HgCdTe[J]. Journal of Infrared and Millimeter Waves, 2001, 20(6): 406

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