• Photonics Research
  • Vol. 10, Issue 8, 1956 (2022)
Xiaobin Liu1, Xuetong Li1, Yuxuan Li1, Yingzhi Li1, Zihao Zhi1, Min Tao1, Baisong Chen1, Lanxuan Zhang1, Pengfei Guo2, Guoqiang Lo2, Xueyan Li1, Fengli Gao1, Bonan Kang1, and Junfeng Song1、3、*
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • 2Advance Micro Foundry Pte Ltd, Singapore 117685, Singapore
  • 3Peng Cheng Laboratory, Shenzhen 518000, China
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    DOI: 10.1364/PRJ.452004 Cite this Article Set citation alerts
    Xiaobin Liu, Xuetong Li, Yuxuan Li, Yingzhi Li, Zihao Zhi, Min Tao, Baisong Chen, Lanxuan Zhang, Pengfei Guo, Guoqiang Lo, Xueyan Li, Fengli Gao, Bonan Kang, Junfeng Song. Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction[J]. Photonics Research, 2022, 10(8): 1956 Copy Citation Text show less
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    Xiaobin Liu, Xuetong Li, Yuxuan Li, Yingzhi Li, Zihao Zhi, Min Tao, Baisong Chen, Lanxuan Zhang, Pengfei Guo, Guoqiang Lo, Xueyan Li, Fengli Gao, Bonan Kang, Junfeng Song. Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction[J]. Photonics Research, 2022, 10(8): 1956
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