• Infrared and Laser Engineering
  • Vol. 51, Issue 2, 20220022 (2022)
Jian Lu, Zhijian Xie*, and Hongchao Zhang
Author Affiliations
  • School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
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    DOI: 10.3788/IRLA20220022 Cite this Article
    Jian Lu, Zhijian Xie, Hongchao Zhang. Light beam induced current mapping to characterize damage characteristics of silicon solar cell irradiated by continuous-wave laser[J]. Infrared and Laser Engineering, 2022, 51(2): 20220022 Copy Citation Text show less
    References

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    [2] D Qiu, H Jin, Y Sun. Damage effects research of solar cells under the irradiation of 1064 nm CW laser. Laser Journal, 34, 23-24(2013).

    [3] Zhang Y. Research of irradiation effects on silicon solar cells with diode laser[D]. Changsha: National University of Defense Technology, 2015. (in Chinese)

    [4] G Zhou, J Xu, J Lu, et al. Irradiation effect of continuous-wave laser on triple-junction GaAs solar cells. Laser & Optoelectronics Progress, 54, 111412(2017).

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    [13] Li Z, Zhou J, Zhang H, et al. Anisotropic study of thermal stresses of (110) Silicon induced by millisecond laser[C]3 rd International Symposium on Laser Interaction with Matter, 2014.

    [14] Z Jia, Z Li, X Lv, et al. Slip-free processing of (001) silicon wafers under 1064 nm laser ablation. Applied Optics, 56, 4900-4904(2017).

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    Jian Lu, Zhijian Xie, Hongchao Zhang. Light beam induced current mapping to characterize damage characteristics of silicon solar cell irradiated by continuous-wave laser[J]. Infrared and Laser Engineering, 2022, 51(2): 20220022
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