• Acta Optica Sinica
  • Vol. 41, Issue 20, 2031002 (2021)
Wenyuan Zhao1、2, Mengyao Zhang1、2, Ran Bi1、2, Chuantao Zheng1、2、*, and Yiding Wang1、2
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, Jilin 130012, China
  • 2Jilin Provincial Engineering Research Center of Infrared Gas Sensing Technique, Changchun, Jilin 130012, China
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    DOI: 10.3788/AOS202141.2031002 Cite this Article Set citation alerts
    Wenyuan Zhao, Mengyao Zhang, Ran Bi, Chuantao Zheng, Yiding Wang. Infrared Hf-doped ZnO Transparent Conductive Film[J]. Acta Optica Sinica, 2021, 41(20): 2031002 Copy Citation Text show less
    Microstructure of the HZO films. (a) XRD spectra of films under different annealing temperatures; (b) XRD spectra of films under different oxygen flow rates; (c) crystalline size of films under different oxygen flow rates; (d) structure of the HfO2 (m phase), reproduced with permission
    Fig. 1. Microstructure of the HZO films. (a) XRD spectra of films under different annealing temperatures; (b) XRD spectra of films under different oxygen flow rates; (c) crystalline size of films under different oxygen flow rates; (d) structure of the HfO2 (m phase), reproduced with permission
    Surface morphology of the HZO films under different oxygen flow rates. (a) 0 mL/min; (b) 0.2 mL/min; (c) 0.4 mL/min; (d) 0.6 mL/min; (e) 0.8 mL/min
    Fig. 2. Surface morphology of the HZO films under different oxygen flow rates. (a) 0 mL/min; (b) 0.2 mL/min; (c) 0.4 mL/min; (d) 0.6 mL/min; (e) 0.8 mL/min
    Optical properties of HZO films
    Fig. 3. Optical properties of HZO films
    Electrical properties of the HZO films
    Fig. 4. Electrical properties of the HZO films
    Annealing condition2θ /(°)dFWHM /(°)D /nm
    As-deposited33.7762.65151.1818.00
    Annealed at 400 ℃34.4102.60410.88210.79
    Annealed at 600 ℃34.4232.60320.80211.87
    Annealed at 800 ℃34.4852.59860.65214.61
    Table 1. Structural parameters of HZO films under different annealing conditions
    Annealing conditionFilm thickness /nm
    0 mL/min0.2 mL/min0.4 mL/min0.6 mL/min0.8 mL/min
    As-deposited370440343341300
    Annealed at 800 ℃287326235226153
    Table 2. Thickness of HZO films under different oxygen flow rates
    Wenyuan Zhao, Mengyao Zhang, Ran Bi, Chuantao Zheng, Yiding Wang. Infrared Hf-doped ZnO Transparent Conductive Film[J]. Acta Optica Sinica, 2021, 41(20): 2031002
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