A Wide Voltage-Wide Temperature Range Current Reference Circuit Based on BCD Process

SHAO Gang; LIU Minxia; TIAN Ze

doi:10.13911/j.cnki.1004-3365.200117

[1] VAN KESSEL, H J. A new bipolar reference current source ［J］. IEEE J Sol Sta Circ, 1986, 21(4): 561-567.

[2] WU C, GOH W, KOK C, et al. A low TC, supply independent and process compensated current reference ［C］ // Proceed IEEE CICC. San Jose, CA, USA. 2015: 1-4.

[3] YANG B D, SHIN Y K, LEE J S, et al. An accurate current reference using temperature and process compensation current mirror ［C］ // Proceed ASSCC. Taipei, Taiwan. 2009: 241-244.

[4] LIU W, KHALIL W, ISMAIL M, et al. A resistor-free temperature-compensated CMOS current reference ［C］ // Proceed IEEE ISCAS. Paris, France. 2010: 845-848.

[5] HIROSE T, OSAKI Y, KUROKI N, et al. A nano-ampere current reference circuit and its temperature dependence control by using temperature characteristics of carrier mobilities ［C］ // Proceed ESSCIRC. Seville, Spain. 2010: 114-117.

[6] LEE J, CHO S H. A 1.4-μW 24.9-ppm/℃ current reference with process-insensitive temperature compensation in 0.18-μm CMOS ［J］. IEEE J Sol Sta Circ, 2012, 47(10): 2527-2533.

[7] SANSEN W M, EYNDE F O T, STEYAERT M. A CMOS temperature-compensated current reference ［J］. IEEE J Sol Sta Circ, 1988, 23(3): 821-824.

[8] OSIPOV D, PAUL S. Compact extended industrial range CMOS current references ［J］. IEEE Trans Circ Syst I: Regu Pap, 2019, 66(6): 1998-2006.

[9] FIORI F, CROVETTI P S. A new compact temperature-compensated CMOS current reference ［J］. IEEE Trans Circ Syst II: Expr Bri, 2005, 52(11): 724-728.

[10] GEORGIOU J, TOUMAZOU C. A resistorless low current reference circuit for implantable devices［C］ // Proceed IEEE ISCAS. Phoenix-Scottsdale, AZ, USA. 2002: 1-4.

[11] LIU K, SHEN Y, YE Y, et al. A current reference based on bandgap technology with wide input voltage range by using 0.18 μm BCD Process ［C］ // Proceed IEEE EDSSC. Bangkok, Thailand. 2012: 1-4.