Laser direct writing and characterizations of flexible piezoresistive sensors with microstructures

Chenying Zhang; Wei Zhou; Da Geng; Cheng Bai; Weida Li; Songyue Chen; Tao Luo; Lifeng Qin; Yu Xie

doi:10.29026/oea.2021.200061

Journals >Opto-Electronic Advances >Volume 4 >Issue 4 >Page 200061-1 > Article

Opto-Electronic Advances
Vol. 4, Issue 4, 200061-1 (2021)

Laser direct writing and characterizations of flexible piezoresistive sensors with microstructures

Chenying Zhang¹, Wei Zhou^1、*, Da Geng¹, Cheng Bai¹, Weida Li^1、2, Songyue Chen¹, Tao Luo¹, Lifeng Qin¹, and Yu Xie¹

Author Affiliations

¹Department of Mechanical & Electrical Engineering, Xiamen University, Xiamen 361101, China

²College of Information Science and Engineering, Northeastern University, Shenyang 110004, China.

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DOI: 10.29026/oea.2021.200061 Cite this Article

Chenying Zhang, Wei Zhou, Da Geng, Cheng Bai, Weida Li, Songyue Chen, Tao Luo, Lifeng Qin, Yu Xie. Laser direct writing and characterizations of flexible piezoresistive sensors with microstructures[J]. Opto-Electronic Advances, 2021, 4(4): 200061-1 Copy Citation Text

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Fig. 1. SEM images of (a) MWCNTs, (b) PDMS, (c) MPC.

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Fig. 2. Stretching test of materials.

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Fig. 3. Variation of laser power and pulse with repetition frequency at Q = 1.

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Fig. 4. Surface morphologies of microstructures fabricated with different laser parameters imaged by a SEM.Abbreviations | Param 1: f = 35 kHz, v = 100 mm·s^-1; Param 2: f = 35 kHz, v = 150 mm·s^-1; Param 3: f = 35 kHz, v = 200 mm·s^-1; Param 4: f = 40 kHz, v = 100 mm·s^-1; Param 5: f = 40 kHz, v = 150 mm·s^-1; Param 6: f = 40 kHz, v = 200 mm·s^-1; Param 7: f = 45 kHz, v = 100 mm·s^-1; Param 8: f = 45 kHz, v = 150 mm·s^-1; Param 9: f = 45 kHz, v = 200 mm·s^-1.

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Fig. 5. Sensitivities of flexible piezoresistive sensors fabricated by different laser parameters (a) f=35 kHz. (b) f=40 kHz. (c) f=45 kHz. (d) without microstructures.

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Parameter	Symbol	Value	Unit
Laser wavelength	λ	355	nm
Repetition frequency	f	≤300	kHz
Average output power	P	≤12	W
Pulse width	τ	≤12	ns
Beam quality factor	M²	≤1.2

Table 1. Parameters of the SEAL-355-10 laser.

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Parameters	Symbols	Units	Experimental values
Laser repetition frequency	f	kHz	35, 40, 45
Scanning speed	v	mm s^-1	100, 150, 200
Scanning times	n		4
Q pulse width	Q	μs	1

Table 2. Parameter ranges for laser processing of the flexible piezoresistive sensor with microstructures.

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Ref.	Microstructures	Methods	Maximum sensibility[% kPa^-1]	Detection limits[kPa]	Response time[ms]
1	Multilayer	Chemical synthesis	20	40	30
2	Fabric network	Dipping, thiolation	8.36	200	87
3	Hierarchical microstructures	Molding, etching, thermal oxidation, CVD	13.7	12	40
4	Porous material	Printing	0.04	40	Not given
5	Fish scale like	Curing on water surface, dipping	70.86	5	Not given
6	Hierarchical porosity	3D Printing	6.7	800	20
7	Irregular microstructures	Molding, thermal reduction	25.1	40	80
8	Hierarchical wrinkles	Thermal deforming, stretching, thermal reduction	0.98	4	100
This work	Curved cone-like microstructures	Laser direct writing	21.80	20	100

Table 3. Comprehensive comparisons between this work and references¹⁻⁸.

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