• Acta Optica Sinica
  • Vol. 42, Issue 7, 0714004 (2022)
Yingming Ren1、2 and Zhiyu Zhang1、*
Author Affiliations
  • 1Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/AOS202242.0714004 Cite this Article Set citation alerts
    Yingming Ren, Zhiyu Zhang. Surface of Nanosecond Laser Polished Single-Crystal Silicon Improved by Two-Step Laser Irradiation[J]. Acta Optica Sinica, 2022, 42(7): 0714004 Copy Citation Text show less
    Three-dimensional surface topography of original surface and cross-sectional profile curve; (a) Three-dimensional surface topography of original surface; (b) cross-sectional profile curve along line A direction in Fig. 1(a)
    Fig. 1. Three-dimensional surface topography of original surface and cross-sectional profile curve; (a) Three-dimensional surface topography of original surface; (b) cross-sectional profile curve along line A direction in Fig. 1(a)
    Schematic diagram of coordinate system used in laser irradiation model
    Fig. 2. Schematic diagram of coordinate system used in laser irradiation model
    Thermal conductivity and specific heat capacity of single-crystal silicon varying with temperature
    Fig. 3. Thermal conductivity and specific heat capacity of single-crystal silicon varying with temperature
    Temperature distribution simulated by FEM during monopulse irradiation under different energy densities. (a) 0.27 J/cm2; (b) 0.42 J/cm2; (c) 0.50 J/cm2; (d) 0.58 J/cm2
    Fig. 4. Temperature distribution simulated by FEM during monopulse irradiation under different energy densities. (a) 0.27 J/cm2; (b) 0.42 J/cm2; (c) 0.50 J/cm2; (d) 0.58 J/cm2
    Temperature changes at different depths from surface under different energy densities. (a) 0.27 J/cm2; (b) 0.42 J/cm2; (c) 0.50 J/cm2; (d) 0.58 J/cm2
    Fig. 5. Temperature changes at different depths from surface under different energy densities. (a) 0.27 J/cm2; (b) 0.42 J/cm2; (c) 0.50 J/cm2; (d) 0.58 J/cm2
    Two-dimensional surface topographies of single-crystal silicon during single-line scanning under different energy densities. (a) Original surface; (b) 0.16 J/cm2; (c) 0.27 J/cm2; (d) 0.42 J/cm2; (e) 0.50 J/cm2; (f) 0.58 J/cm2
    Fig. 6. Two-dimensional surface topographies of single-crystal silicon during single-line scanning under different energy densities. (a) Original surface; (b) 0.16 J/cm2; (c) 0.27 J/cm2; (d) 0.42 J/cm2; (e) 0.50 J/cm2; (f) 0.58 J/cm2
    Schematic diagram of Marangoni flow
    Fig. 7. Schematic diagram of Marangoni flow
    Two-dimensional surface topographies of single-crystal silicon under different beam overlap ratios when laser energy density is 0.50 J/cm2. (a) 50.0%; (b) 62.5%; (c) 75.0%; (d) 87.5%
    Fig. 8. Two-dimensional surface topographies of single-crystal silicon under different beam overlap ratios when laser energy density is 0.50 J/cm2. (a) 50.0%; (b) 62.5%; (c) 75.0%; (d) 87.5%
    Surface roughness of irradiated single-crystal silicon under different beam overlap ratios when laser energy density is 0.50 J/cm2
    Fig. 9. Surface roughness of irradiated single-crystal silicon under different beam overlap ratios when laser energy density is 0.50 J/cm2
    Two-dimensional surface morphologies after second irradiation under different laser energy densities when beam overlap ratio is 75.0%. (a) 0.12 J/cm2; (b) 0.20 J/cm2; (c) 0.28 J/cm2; (d) 0.36 J/cm2
    Fig. 10. Two-dimensional surface morphologies after second irradiation under different laser energy densities when beam overlap ratio is 75.0%. (a) 0.12 J/cm2; (b) 0.20 J/cm2; (c) 0.28 J/cm2; (d) 0.36 J/cm2
    Surface roughness after second irradiation under different laser energy densities when beam overlap ratio is 75.0%
    Fig. 11. Surface roughness after second irradiation under different laser energy densities when beam overlap ratio is 75.0%
    Original zone and irradiated zone and their cross-sectional profile curves. (a) Original zone and irradiated zone; (b) cross-sectional profile curve along line B direction in Fig. 12(a)
    Fig. 12. Original zone and irradiated zone and their cross-sectional profile curves. (a) Original zone and irradiated zone; (b) cross-sectional profile curve along line B direction in Fig. 12(a)
    Process parameterValue
    Wavelength /nm532
    Pulse width /ns52
    Spot diameter /μm80
    Repetition frequency /kHz150
    Laser average power /W5--18
    Scanning velocity /(mm·s-1)50
    Table 1. Laser irradiation conditions
    Yingming Ren, Zhiyu Zhang. Surface of Nanosecond Laser Polished Single-Crystal Silicon Improved by Two-Step Laser Irradiation[J]. Acta Optica Sinica, 2022, 42(7): 0714004
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