A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties

Botong Li; Xiaodong Zhang; Li Zhang; Yongjian Ma; Wenbo Tang; Tiwei Chen; Yu Hu; Xin Zhou; Chunxu Bian; Chunhong Zeng; Tao Ju; Zhongming Zeng; Baoshun Zhang

doi:10.1088/1674-4926/44/6/061801

[2] M H Wong, M Higashiwaki. Vertical β-Ga2O3 power transistors: A review. IEEE Trans Electron Devices, 67, 3925(2020).

[3] X She, A Q Huang, Ó Lucía et al. Review of silicon carbide power devices and their applications. IEEE Trans Ind Electron, 64, 8193(2017).

[4] R Z Sun, J X Lai, W J Chen et al. GaN power integration for high frequency and high efficiency power applications: A review. IEEE Access, 8, 15529(2020).

[5] C L Wang, J C Zhang, S R Xu et al. Progress in state-of-the-art technologies of Ga2O3 devices. J Phys D, 54, 243001(2021).

[6] M Higashiwaki, K Sasaki, A Kuramata et al. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 100, 013504(2012).

[7] G Wagner, M Baldini, D Gogova et al. Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy. Phys Status Solidi A, 211, 27(2014).

[8] M Baldini, M Albrecht, A Fiedler et al. Si- and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates. ECS J Solid State Sci Technol, 6, Q3040(2016).

[9] Y W Zhang, F Alema, A Mauze et al. MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature. APL Mater, 7, 022506(2019).

[10] T Oshima, N Arai, N Suzuki et al. Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy. Thin Solid Films, 516, 5768(2008).

[11] K Sasaki, M Higashiwaki, A Kuramata et al. Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy. J Cryst Growth, 392, 30(2014).

[12] K Nomura, K Goto, R Togashi et al. Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy. J Cryst Growth, 405, 19(2014).

[13] Y Oshima, E G Vίllora, K Shimamura. Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by halide vapor phase epitaxy. J Cryst Growth, 410, 53(2015).

[14] J H Leach, K Udwary, J Rumsey et al. Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films. APL Mater, 7, 022504(2019).

[15] N Ueda, H Hosono, R Waseda et al. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals. Appl Phys Lett, 70, 3561(1997).

[16] K Sasaki, A Kuramata, T Masui et al. Device-quality β-Ga2O3 epitaxial films fabricated by ozone molecular beam epitaxy. Appl Phys Express, 5, 035502(2012).

[17] S H Han, A Mauze, E Ahmadi et al. n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy. Semicond Sci Technol, 33, 045001(2018).

[18] E G Víllora, K Shimamura, Y Yoshikawa et al. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping. Appl Phys Lett, 92, 202120(2008).

[19] D Gogova, G Wagner, M Baldini et al. Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE. J Cryst Growth, 401, 665(2014).

[20] E Ahmadi, O S Koksaldi, S W Kaun et al. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. Appl Phys Express, 10, 041102(2017).

[21] M Saleh, A Bhattacharyya, J B Varley et al. Electrical and optical properties of Zr doped β-Ga2O3 single crystals. Appl Phys Express, 12, 085502(2019).

[22] M Saleh, J B Varley, J Jesenovec et al. Degenerate doping in β-Ga2O3 single crystals through Hf-doping. Semicond Sci Technol, 35, 04LT01(2020).

[23] M H Wong, K Sasaki, A Kuramata et al. Field-plated Ga2O3 MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett, 37, 212(2016).

[24] Y J Lv, X Y Zhou, S B Long et al. Source-field-plated β-Ga2O3 MOSFET with record power figure of merit of 50.4 MW/cm2. IEEE Electron Device Lett, 40, 83(2019).

[25] S Sharma, K Zeng, S Saha et al. Field-plated lateral Ga2O3 MOSFETs with polymer passivation and 8.03 kV breakdown voltage. IEEE Electron Device Lett, 41, 836(2020).

[26] M Kanechika, M Sugimoto, N Soejima et al. A vertical insulated gate AlGaN/GaN heterojunction field-effect transistor. Jpn J Appl Phys, 46, L503(2007).

[27] J N Shenoy, J A Cooper, M R Melloch. High-voltage double-implanted power MOSFET’s in 6H-SiC. IEEE Electron Device Lett, 18, 93(1997).

[28] A Kyrtsos, M Matsubara, E Bellotti. On the feasibility of p-type Ga2O3. Appl Phys Lett, 112, 032108(2018).

[29] K D Chabak, J P McCandless, N A Moser et al. Recessed-gate enhancement-mode β-Ga2O3 MOSFETs. IEEE Electron Device Lett, 39, 67(2018).

[30] Z Q Feng, Y C Cai, Z Li et al. Design and fabrication of field-plated normally off β-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application. Appl Phys Lett, 116, 243503(2020).

[31] T Kamimura, Y Nakata, M H Wong et al. Normally-off Ga2O3 MOSFETs with unintentionally nitrogen-doped channel layer grown by plasma-assisted molecular beam epitaxy. IEEE Electron Device Lett, 40, 1064(2019).

[32] X Z Zhou, Q Liu, W B Hao et al. Normally-off β-Ga2O3 power heterojunction field-effect-transistor realized by p-NiO and recessed-gate. 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 101(2022).

[33] Z X Feng, A F M Anhar Uddin Bhuiyan, M R Karim et al. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties. Appl Phys Lett, 114, 250601(2019).

[34] G Seryogin, F Alema, N Valente et al. MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor. Appl Phys Lett, 117, 262101(2020).

[35] T Zhang, Y F Li, Q Cheng et al. Influence of O2 pulse on the β-Ga2O3 films deposited by pulsed MOCVD. Ceram Int, 48, 8268(2022).

[36] A Hernandez, M M Islam, P Saddatkia et al. MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3. Results Phys, 25, 104167(2021).

[37] F Alema, B Hertog, A Osinsky et al. Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD. J Cryst Growth, 475, 77(2017).

[38] Anooz S Bin, R Grüneberg, C Wouters et al. Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE. Appl Phys Lett, 116, 182106(2020).

[39] R Schewski, M Baldini, K Irmscher et al. Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—a quantitative model. J Appl Phys, 120, 225308(2016).

[40] K D Chabak, N Moser, A J Green et al. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage. Appl Phys Lett, 109, 213501(2016).

[41] J E Hogan, S W Kaun, E Ahmadi et al. Chlorine-based dry etching of β-Ga2O3. Semicond Sci Technol, 31, 065006(2016).

[42] H Dong, S B Long, H D Sun et al. Fast switching β-Ga2O3 power MOSFET with a trench-gate structure. IEEE Electron Device Lett, 40, 1385(2019).

[43] A J Green, K D Chabak, M Baldini et al. β-Ga2O3 MOSFETs for radio frequency operation. IEEE Electron Device Lett, 38, 790(2017).

[44] H B Do, A V Phan-Gia, V Q Nguyen et al. Optimization of normally-off β-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study. AIP Adv, 12, 065024(2022).

[45] H B Do, Q H Luc, M T H Ha et al. Investigation of Mo/Ti/AlN/HfO2 high-k metal gate stack for low power consumption InGaAs NMOS device application. IEEE Electron Device Lett, 38, 552(2017).

[46] M H Wong, Y Nakata, A Kuramata et al. Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain. Appl Phys Express, 10, 041101(2017).

[47] L L Guo, S Z Luan, H P Zhang et al. Analytical model and structure of the multilayer enhancement-mode β-Ga2O3 planar MOSFETs. IEEE Trans Electron Devices, 69, 682(2022).

[48] X Z Zhou, Q Liu, G W Xu et al. Realizing high-performance β-Ga2O3 MOSFET by using variation of lateral doping: A TCAD study. IEEE Trans Electron Devices, 68, 1501(2021).

[49] R Stengl, U Gosele. Variation of lateral doping - A new concept to avoid high voltage breakdown of planar junctions. 1985 International Electron Devices Meeting, 154(2005).

[50] Y J Lv, X Y Zhou, S B Long et al. Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistor with high breakdown voltage over 3000 V realized by oxygen annealing. Phys Status Solidi RRL, 14, 1900586(2020).

[51] S Ghosh, M Baral, R Kamparath et al. Investigations on band commutativity at all oxide p-type NiO/n-type β-Ga2O3 heterojunction using photoelectron spectroscopy. Appl Phys Lett, 115, 251603(2019).

[52] X Lu, X D Zhou, H X Jiang et al. 1-kV sputtered p-NiO/n-Ga2O3 heterojunction diodes with an ultra-low leakage current below 1 μA/cm2. IEEE Electron Device Lett, 41, 449(2020).

[53] H H Gong, X H Chen, Y Xu et al. A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode. Appl Phys Lett, 117, 022104(2020).

[54] C L Wang, H H Gong, W N Lei et al. Demonstration of the p-NiOx/n-Ga2O3 heterojunction gate FETs and diodes with BV2/Ron, sp figures of merit of 0.39 GW/cm2 and 1.38 GW/cm2. IEEE Electron Device Lett, 42, 485(2021).

[55] W N Lei, K Dang, H Zhou et al. Proposal and simulation of Ga2O3 MOSFET with PN heterojunction structure for high-performance E-mode operation. IEEE Trans Electron Devices, 69, 3617(2022).

[56] H Murakami, K Nomura, K Goto et al. Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy. Appl Phys Express, 8, 015503(2015).

[57] M H Wong, K Goto, H Murakami et al. Current aperture vertical β-Ga2O3 MOSFETs fabricated by N- and Si-ion implantation doping. IEEE Electron Device Lett, 40, 431(2019).

[58] M H Wong, H Murakami, Y Kumagai et al. Enhancement-mode β-Ga2O3 current aperture vertical MOSFETs with N-ion-implanted blocker. IEEE Electron Device Lett, 41, 296(2020).

[59] K Zeng, R Soman, Z L Bian et al. Vertical Ga2O3 MOSFET with magnesium diffused current blocking layer. IEEE Electron Device Lett, 43, 1527(2022).

[60] X Z Zhou, Y J Ma, G W Xu et al. Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing. Appl Phys Lett, 121, 223501(2022).

[61] Y Ma, X Zhou, W Tang et al. 702.3 A∙ cm–2/10.4 mΩ∙cm2 vertical β-Ga2O3 U-shape trench gate MOSFET with N-ion implantation. IEEE Electron Device Lett, 44, 384(2023).

[62] Z Y Hu, K Nomoto, W S Li et al. Enhancement-mode Ga2O3 vertical transistors with breakdown voltage >1 kV. IEEE Electron Device Lett, 39, 869(2018).

[63] Z Y Hu, K Nomoto, W S Li et al. 1.6 kV vertical Ga2O3 FinFETs with source-connected field plates and normally-off operation. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 483(2019).

[64] W Li, K Nomoto, Z Hu et al. Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV. 2019 IEEE International Electron Devices Meeting (IEDM), 12.4.1(2020).

[65] K Zeng, A Vaidya, U Singisetti. 1.85 kV breakdown voltage in lateral field-plated Ga2O3 MOSFETs. IEEE Electron Device Lett, 39, 1385(2018).

[66] J K Mun, K Cho, W Chang et al. 2.32 kV breakdown voltage lateral β-Ga2O3 MOSFETs with source-connected field plate. ECS J Solid State Sci Technol, 8, Q3079(2019).

[67] Y B Wang, H H Gong, X L Jia et al. Demonstration of β-Ga2O3 superjunction-equivalent MOSFETs. IEEE Trans Electron Devices, 69, 2203(2022).

[68] G Deboy, N Marz, J P Stengl et al. A new generation of high voltage MOSFETs breaks the limit line of silicon. International Electron Devices Meeting, 683(1998).

[69] J Kim, K Kim. A novel 4H-SiC super junction UMOSFET with heterojunction diode for enhanced reverse recovery characteristics. 2020 International Conference on Electronics, Information, and Communication (ICEIC), 1(2020).

[70] A Nakajima, Y Sumida, M H Dhyani et al. GaN-based super heterojunction field effect transistors using the polarization junction concept. IEEE Electron Device Lett, 32, 542(2011).

[71] S H Kim, D Shoemaker, B Chatterjee et al. Thermally-aware layout design of β-Ga2O3 lateral MOSFETs. IEEE Trans Electron Devices, 69, 1251(2022).

[72] S H Kim, J Spencer lundh, D Shoemaker et al. Device-level transient cooling of β-Ga2O3 MOSFETs. 2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm), 1(2022).

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