Author Affiliations
1School of Microelectronics, Tianjin University, Tianjin 300072, China2Tianjin Key Laboratory of Imaging and Sensing Microelectronics Technology, Tianjin , 300072, Chinashow less
Fig. 1. Pixel structure of pulse sequence image sensor
Fig. 2. Relationship between trigger time, readout time, and pulse interval
Fig. 3. Characteristic curve of pulse interval and reconstructed gray scale
Fig. 4. Images under the influence of different noises. (a) Image affected by spatial noise; (b) images affected by temporal noise and single-code flicker noise; (c) 50th frame and 100th frame grayscale images reconstructed under same input bar chart
Fig. 5. Time error rate corresponding to spatial noise varies with Vdiff and Ip. (a) Relationship between time error and Vdiff; (b) relationship between time error and Ip
Fig. 6. Relationship between error caused by temporal noise and Vdiff、Cpd
Fig. 7. Relationship between light intensity and relative error under synchronous readout mechanism. (a) Vdiff=2 V;(b) Vdiff=1.5 V
Fig. 8. Under different Vdiff, FPN and temporal noise change with photocurrent. (a) FPN changes with photocurrent; (b) temporal noise changes with photocurrent
Fig. 9. Images taken by the sensor. (a) 500 lx uniform light; (b) moment the bullet was fired
Fig. 10. Under different Vdiff, FPN and temporal noise change with light intensity. (a) FPN changes with light intensity; (b) temporal noise changes with light intensity
Parameter | Value | Parameter | Value |
---|
Cpd /fF | 10 | Vref /V | 1.0‒3.125 | Id /pA | 1 | θc | 0.005 | Vrst /V | 3.3 | Vtal /mV | 16 |
|
Table 1. Related parameters in the noise model
Parameter | Value | Parameter | Value |
---|
Fabrication process /μm | 0.11 | Fill factor /% | 13.8 | Array size | 250×400 | Vref /V | 1.05-2.45 | Pixel size /(μm×μm) | 20×20 | Vrst /V | 2.4-3.3 |
|
Table 2. Related parameters of the sensor chip