Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates

Yaoran Huang; Taojie Zhou; Mingchu Tang; Guohong Xiang; Haochuan Li; Mickael Martin; Thierry Baron; Siming Chen; Huiyun Liu; Zhaoyu Zhang

doi:10.3788/COL202220.041401

Journals >Chinese Optics Letters >Volume 20 >Issue 4 >Page 041401 > Article

Chinese Optics Letters
Vol. 20, Issue 4, 041401 (2022)

Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates | On the Cover

Yaoran Huang¹, Taojie Zhou^1、2, Mingchu Tang², Guohong Xiang¹, Haochuan Li¹, Mickael Martin³, Thierry Baron³, Siming Chen², Huiyun Liu², and Zhaoyu Zhang^1、*

Author Affiliations

¹School of Science and Engineering and Shenzhen Key Laboratory of Semiconductor Lasers, The Chinese University of Hong Kong, Shenzhen (CUHKSZ), Shenzhen 518172, China

²Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK

³Université Grenoble Alpes, CNRS, CEA-LETI, MINATEC, LTM, F-38054 Grenoble, France

show less

DOI: 10.3788/COL202220.041401 Cite this Article Set citation alerts

Yaoran Huang, Taojie Zhou, Mingchu Tang, Guohong Xiang, Haochuan Li, Mickael Martin, Thierry Baron, Siming Chen, Huiyun Liu, Zhaoyu Zhang. Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates[J]. Chinese Optics Letters, 2022, 20(4): 041401 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Cited By

Article index updated: Apr. 13, 2024

Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.