• Acta Optica Sinica
  • Vol. 41, Issue 17, 1704001 (2021)
Weiyu Zhang, Yang Wang, and Xiangliang Jin*
Author Affiliations
  • School of Physics and Electronics, Hunan Normal University, Changsha, Hunan 410081, China
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    DOI: 10.3788/AOS202141.1704001 Cite this Article Set citation alerts
    Weiyu Zhang, Yang Wang, Xiangliang Jin. Design and Optimization of Double-Wave-Peak Response CMOS Single-Photon Detector[J]. Acta Optica Sinica, 2021, 41(17): 1704001 Copy Citation Text show less
    Three-dimensional structure of double-wave-peak SPAD
    Fig. 1. Three-dimensional structure of double-wave-peak SPAD
    Cross section of double-wave-peak SPAD
    Fig. 2. Cross section of double-wave-peak SPAD
    Electric field distribution of double-wave-peak SPAD
    Fig. 3. Electric field distribution of double-wave-peak SPAD
    Impact ionization distribution of double-wave-peak SPAD
    Fig. 4. Impact ionization distribution of double-wave-peak SPAD
    Photon absorption rate of double-wave-peak SPAD
    Fig. 5. Photon absorption rate of double-wave-peak SPAD
    Current density distribution of double-wave-peak SPAD
    Fig. 6. Current density distribution of double-wave-peak SPAD
    Test platform of double-wave-peak SPAD
    Fig. 7. Test platform of double-wave-peak SPAD
    Schematic and layout patterns of double-wave-peak SPAD. (a) Schematic pattern; (b) layout pattern
    Fig. 8. Schematic and layout patterns of double-wave-peak SPAD. (a) Schematic pattern; (b) layout pattern
    Passive quenching circuit of double-wave-peak SPAD
    Fig. 9. Passive quenching circuit of double-wave-peak SPAD
    I-V characteristic curve of double-wave-peak SPAD
    Fig. 10. I-V characteristic curve of double-wave-peak SPAD
    DCR curve of double-wave-peak SPAD
    Fig. 11. DCR curve of double-wave-peak SPAD
    PDP curve of double-wave-peak SPAD
    Fig. 12. PDP curve of double-wave-peak SPAD
    Device nameProcessPDP
    SPAD in Ref. [11]0.13 μm CMOS34% (1.7 V@450 nm)
    SPAD in Ref. [12]a new silicon SPAD process40% (20 V@800 nm)
    SPAD in Ref. [13]0.13 μm CMOS32%/29% (3 V@450 nm/670 nm)
    SPAD in Ref. [17]0.18 μm CMOS39% (2.5 V@500 nm)
    Proposed SPAD0.18 μm BCD32%/12% (0.5 V@520 nm/840 nm)
    Table 1. Comparison of PDP test data between existed SPADs and proposed SPAD
    Weiyu Zhang, Yang Wang, Xiangliang Jin. Design and Optimization of Double-Wave-Peak Response CMOS Single-Photon Detector[J]. Acta Optica Sinica, 2021, 41(17): 1704001
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