Single photon avalanche diode (SPAD) now plays an indispensable role in extremely low light detection. However, SPADs are often required possessing two response peaks under different lighting conditions, which cannot be realized in a single-wave-peak SPAD (SWP-SPAD). Moreover, the multiple SWP-SPADs responding to different wavelengths will reduce the integration of the detection system. In this work, we propose a double-wave-peak SPAD (DWP-SPAD) to detect both the visible light and the near infrared light. We conduct the device-level simulation by means of the technology of the computer-aided design, and build an external quenching circuit to measure key parameters. The test results show that the breakdown voltage of the SPAD is 12.75 V. Under experimental conditions of 22 ℃ and the excess bias voltage of 0.5 V, there are two peaks of the SPAD’s photon detection probability, 32% at 520 nm and 12% at 840 nm, respectively. When the over-bias voltage is 1 V, the dark count rate (DCR) is 1 kHz. Therefore, the proposed SPAD can achieve double-wave-peak detection at a low DCR.