In recent years, the developments of semiconductor materials follow two directions. One is socalled the material engineering, which is focusing on continuously pursuing new semiconductor material systems. The other one is the band engineering which is used to change the band energy of known semiconductor material system by adjusting their dimensions. Quasi-zero-dimensional semiconductor quantum dot is a typical representative of band engineering by changing the size of dot. In this paper, we are mainly concentrated on introducing the bottlenecks of quasi-zero-dimensional semiconductor quantum dot lasers.