• Journal of Semiconductors
  • Vol. 43, Issue 10, 102801 (2022)
Wenhao Geng1、2, Guang Yang3, Xuqing Zhang1、2, Xi Zhang2, Yazhe Wang2, Lihui Song2, Penglei Chen2, Yiqiang Zhang4, Xiaodong Pi1、2、*, Deren Yang1、2, and Rong Wang1、2、**
Author Affiliations
  • 1State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • 2Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China
  • 3Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
  • 4School of Materials Science and Engineering & College of Chemistry, Zhengzhou University, Zhengzhou 450001, China
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    DOI: 10.1088/1674-4926/43/10/102801 Cite this Article
    Wenhao Geng, Guang Yang, Xuqing Zhang, Xi Zhang, Yazhe Wang, Lihui Song, Penglei Chen, Yiqiang Zhang, Xiaodong Pi, Deren Yang, Rong Wang. Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching[J]. Journal of Semiconductors, 2022, 43(10): 102801 Copy Citation Text show less
    (Color online) (a) AFM image of the CMP-treated 4H-SiC wafer, (b) distribution and (c) density of defects of the CMP-treated 4H-SiC wafer, and (d) DIC and UV-PL images of the same PL-Black defect site [the black box in (b)] of the Si-face of the CMP-treated 4H-SiC wafer.
    Fig. 1. (Color online) (a) AFM image of the CMP-treated 4H-SiC wafer, (b) distribution and (c) density of defects of the CMP-treated 4H-SiC wafer, and (d) DIC and UV-PL images of the same PL-Black defect site [the black box in (b)] of the Si-face of the CMP-treated 4H-SiC wafer.
    (Color online) (a) Schematic diagram showing the setup of the photo-chemical etching of 4H-SiC. (b) The current of 4H-SiC during the photo-chemical etching under the UV and sunlight illumination.
    Fig. 2. (Color online) (a) Schematic diagram showing the setup of the photo-chemical etching of 4H-SiC. (b) The current of 4H-SiC during the photo-chemical etching under the UV and sunlight illumination.
    (a) Differential interference contrast (DIC) optical microscopy image, (b) SEM image, (c) AFM image, and (d) height of the ridge-like defect in the photo-chemically etched Si-face of 4H-SiC.
    Fig. 3. (a) Differential interference contrast (DIC) optical microscopy image, (b) SEM image, (c) AFM image, and (d) height of the ridge-like defect in the photo-chemically etched Si-face of 4H-SiC.
    (Color online) (a) Optical microscopy image, (b) Raman spectra, and Raman mappings based on the intensity of peaks located at (c) 204, (d) 776, and (e) 984 cm–1 across the ridge-like defect in the photo-chemically etched Si-face of 4H-SiC.
    Fig. 4. (Color online) (a) Optical microscopy image, (b) Raman spectra, and Raman mappings based on the intensity of peaks located at (c) 204, (d) 776, and (e) 984 cm–1 across the ridge-like defect in the photo-chemically etched Si-face of 4H-SiC.
    (Color online) (a) Schematic diagram of molten-KOH etching of the photo-chemically etched Si-face of 4H-SiC. (b, c) DIC images obtained with the molten-KOH etching with 3 and 30 min, respectively. The insets show the local SEM images in the red dotted boxes.
    Fig. 5. (Color online) (a) Schematic diagram of molten-KOH etching of the photo-chemically etched Si-face of 4H-SiC. (b, c) DIC images obtained with the molten-KOH etching with 3 and 30 min, respectively. The insets show the local SEM images in the red dotted boxes.
    (Color online) Cross-section schematic diagrams showing the Si-face of 4H-SiC after the (a) fine-lapping, (b) CMP, (c) photo-chemical etching and (d) molten-KOH etching.
    Fig. 6. (Color online) Cross-section schematic diagrams showing the Si-face of 4H-SiC after the (a) fine-lapping, (b) CMP, (c) photo-chemical etching and (d) molten-KOH etching.
    Wenhao Geng, Guang Yang, Xuqing Zhang, Xi Zhang, Yazhe Wang, Lihui Song, Penglei Chen, Yiqiang Zhang, Xiaodong Pi, Deren Yang, Rong Wang. Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching[J]. Journal of Semiconductors, 2022, 43(10): 102801
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