• Acta Optica Sinica
  • Vol. 39, Issue 1, 0122001 (2019)
Yanqiu Li1、*, Yan Liu2, and Lihui Liu1
Author Affiliations
  • 1 Key Laboratory of Photoelectronic Imaging Technology and System, Ministry of Education, School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China
  • 2 Beijing Aerospace Institute for Metrology and Measurement Technology, Beijing 100076, China
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    DOI: 10.3788/AOS201939.0122001 Cite this Article Set citation alerts
    Yanqiu Li, Yan Liu, Lihui Liu. Effect of Thermal Deformation on Imaging Performance for 16 nm Extreme Ultraviolet Lithography Objective[J]. Acta Optica Sinica, 2019, 39(1): 0122001 Copy Citation Text show less
    (a) Layout of EUVL objective; (b) modulation transfer function
    Fig. 1. (a) Layout of EUVL objective; (b) modulation transfer function
    Finite element model of M1 mirror
    Fig. 2. Finite element model of M1 mirror
    Heat loading steps-time plot of mirror
    Fig. 3. Heat loading steps-time plot of mirror
    (a) Annular distribution of luminous intensity; (b) distribution of illuminance on mask
    Fig. 4. (a) Annular distribution of luminous intensity; (b) distribution of illuminance on mask
    Curve of reflectivity of Mo/Si multilayer relative to incidence angle
    Fig. 5. Curve of reflectivity of Mo/Si multilayer relative to incidence angle
    (a) Temperature and (b) thermal deformation maps of M1 mirror at the end of last-heat-loading step
    Fig. 6. (a) Temperature and (b) thermal deformation maps of M1 mirror at the end of last-heat-loading step
    Curves of (a) temperature and (b) thermal deformation RMS value of each mirror relative to time
    Fig. 7. Curves of (a) temperature and (b) thermal deformation RMS value of each mirror relative to time
    Image annular field of view
    Fig. 8. Image annular field of view
    (a) WFE RMS and (b) distortion of objective system on the moments of maximum temperature and minimal temperature
    Fig. 9. (a) WFE RMS and (b) distortion of objective system on the moments of maximum temperature and minimal temperature
    (a) WFE RMS and (b) distortion of edge image field of view caused by thermal deformation of each mirror on maximum temperature moment
    Fig. 10. (a) WFE RMS and (b) distortion of edge image field of view caused by thermal deformation of each mirror on maximum temperature moment
    Curvature of each mirror, height of chief ray and incidence angle of chief ray
    Fig. 11. Curvature of each mirror, height of chief ray and incidence angle of chief ray
    ParameterULESiMoInvar
    Density /(g·cm-3)2.2052.3310.38.12
    Thermal conductivity /(mW·mm-1·K-1)1.311481381.09
    Specific heat /(J·kg-1·K-1)0.7660.7120.255-
    Emissivity0.7350.1220.1220.28
    Young's ratio /GPa67.6107272134
    Poisson's ratio0.170.250.250.3
    Thermal expansion coefficient /(10-6 K-1)0.022.505.351.06
    Table 1. Characteristic parameters of mirrors and supporting mount materials
    ItemValue
    Throughout /(wafer·h-1)125
    EUV power of intensity focus /W250
    Total time for one wafer /s28.8
    Exposure time /s7.2
    Wafer exchange time /s721.6
    Wafer diameter /mm300
    Resist sensitivity /(mJ·cm-2)15
    Power at wafer /mW689
    Table 2. Model of 16 nm EUVL prototype productivity
    MirrorM1M2M3M4M5M6
    Mean incidence angle /(°)6.36.622.411.512.44.7
    Mean reflectivity /%67.567.767.367.667.767.5
    Absorbed EUV power /mW2402.191609.031102.80735.38495.58337.59
    Reflective area /mm217439333384782125085077.455102
    Absorbed power density /(mW·mm-2)0.1380.0480.2310.0590.0980.006
    Table 3. Relevant calculating data of the absorbed EUV power density for each mirror
    ItemValue
    WFE RMS<0.03λ
    Distortion<1.1 nm
    Table 4. Imaging performance demands for objective
    ItemPO1PO2
    3D thermal deformation (M1-M6) /nm8.3,3.8,6.2,1.1,4.2,0.51.6,4.1,4.8,0.4,2.5,0.2
    WFE RMS /λ0.10.006
    Maximum distortion /nm567
    Table 5. Analysis of thermal deformation for 16 nm and 22 nm EUVL objectives
    Yanqiu Li, Yan Liu, Lihui Liu. Effect of Thermal Deformation on Imaging Performance for 16 nm Extreme Ultraviolet Lithography Objective[J]. Acta Optica Sinica, 2019, 39(1): 0122001
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