Author Affiliations
1 Key Laboratory of Photoelectronic Imaging Technology and System, Ministry of Education, School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China2 Beijing Aerospace Institute for Metrology and Measurement Technology, Beijing 100076, Chinashow less
Fig. 1. (a) Layout of EUVL objective; (b) modulation transfer function
Fig. 2. Finite element model of M1 mirror
Fig. 3. Heat loading steps-time plot of mirror
Fig. 4. (a) Annular distribution of luminous intensity; (b) distribution of illuminance on mask
Fig. 5. Curve of reflectivity of Mo/Si multilayer relative to incidence angle
Fig. 6. (a) Temperature and (b) thermal deformation maps of M1 mirror at the end of last-heat-loading step
Fig. 7. Curves of (a) temperature and (b) thermal deformation RMS value of each mirror relative to time
Fig. 8. Image annular field of view
Fig. 9. (a) WFE RMS and (b) distortion of objective system on the moments of maximum temperature and minimal temperature
Fig. 10. (a) WFE RMS and (b) distortion of edge image field of view caused by thermal deformation of each mirror on maximum temperature moment
Fig. 11. Curvature of each mirror, height of chief ray and incidence angle of chief ray
Parameter | ULE | Si | Mo | Invar |
---|
Density /(g·cm-3) | 2.205 | 2.33 | 10.3 | 8.12 | Thermal conductivity /(mW·mm-1·K-1) | 1.31 | 148 | 138 | 1.09 | Specific heat /(J·kg-1·K-1) | 0.766 | 0.712 | 0.255 | - | Emissivity | 0.735 | 0.122 | 0.122 | 0.28 | Young's ratio /GPa | 67.6 | 107 | 272 | 134 | Poisson's ratio | 0.17 | 0.25 | 0.25 | 0.3 | Thermal expansion coefficient /(10-6 K-1) | 0.02 | 2.50 | 5.35 | 1.06 |
|
Table 1. Characteristic parameters of mirrors and supporting mount materials
Item | Value |
---|
Throughout /(wafer·h-1) | 125 | EUV power of intensity focus /W | 250 | Total time for one wafer /s | 28.8 | Exposure time /s | 7.2 | Wafer exchange time /s | 721.6 | Wafer diameter /mm | 300 | Resist sensitivity /(mJ·cm-2) | 15 | Power at wafer /mW | 689 |
|
Table 2. Model of 16 nm EUVL prototype productivity
Mirror | M1 | M2 | M3 | M4 | M5 | M6 |
---|
Mean incidence angle /(°) | 6.3 | 6.6 | 22.4 | 11.5 | 12.4 | 4.7 | Mean reflectivity /% | 67.5 | 67.7 | 67.3 | 67.6 | 67.7 | 67.5 | Absorbed EUV power /mW | 2402.19 | 1609.03 | 1102.80 | 735.38 | 495.58 | 337.59 | Reflective area /mm2 | 17439 | 33338 | 4782 | 12508 | 5077.4 | 55102 | Absorbed power density /(mW·mm-2) | 0.138 | 0.048 | 0.231 | 0.059 | 0.098 | 0.006 |
|
Table 3. Relevant calculating data of the absorbed EUV power density for each mirror
Item | Value |
---|
WFE RMS | <0.03λ | Distortion | <1.1 nm |
|
Table 4. Imaging performance demands for objective
Item | PO1 | PO2 |
---|
3D thermal deformation (M1-M6) /nm | 8.3,3.8,6.2,1.1,4.2,0.5 | 1.6,4.1,4.8,0.4,2.5,0.2 | WFE RMS /λ | 0.1 | 0.006 | Maximum distortion /nm | 56 | 7 |
|
Table 5. Analysis of thermal deformation for 16 nm and 22 nm EUVL objectives