• Journal of Infrared and Millimeter Waves
  • Vol. 20, Issue 3, 165 (2001)
[in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese]. INFLUENCE OF MS INTERFACE TRANSPORT ON THE CURRENT-VOLTAGE CHARACTERISTIC OF MCT PV DEVICE[J]. Journal of Infrared and Millimeter Waves, 2001, 20(3): 165 Copy Citation Text show less
    References

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    [3] Spicer W E. Metal contacts of Hg1-xCdxTe.J.Vac. Sci.Technol.,1990,A8(2): 1174

    [4] Rideout V L. A review of the theory and technology for ohmic contacts to group Ⅲ-Ⅴ compound semiconductors.Solid-State-Electron,1975,18:541

    [5] John Brice, Peter Capper,eds. Properties of Mercury Cadmium Telluride. London and New York: INSPEC, 1987

    [6] Polla D L, Sood A K. Schottky barrier photodiodes in p-Hg1-xCdxTe.J.Appl.Phys.,1980,51(9): 4908

    [7] Sze S M. Physics of Semiconductor Devices (2nd ed). New York: John Wiley & Sons, 1981. 79

    [8] Rhoderick E H. Metal-Semiconductor Contacts. Oxford: Clarendon Press,1980

    [in Chinese], [in Chinese], [in Chinese]. INFLUENCE OF MS INTERFACE TRANSPORT ON THE CURRENT-VOLTAGE CHARACTERISTIC OF MCT PV DEVICE[J]. Journal of Infrared and Millimeter Waves, 2001, 20(3): 165
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