INFLUENCE OF MS INTERFACE TRANSPORT ON THE CURRENT-VOLTAGE CHARACTERISTIC OF MCT PV DEVICE

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 20 >Issue 3 >Page 165 > Article

Journal of Infrared and Millimeter Waves
Vol. 20, Issue 3, 165 (2001)

INFLUENCE OF MS INTERFACE TRANSPORT ON THE CURRENT-VOLTAGE CHARACTERISTIC OF MCT PV DEVICE

[in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese]. INFLUENCE OF MS INTERFACE TRANSPORT ON THE CURRENT-VOLTAGE CHARACTERISTIC OF MCT PV DEVICE[J]. Journal of Infrared and Millimeter Waves, 2001, 20(3): 165 Copy Citation Text

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Abstract

The influence of MS transport on the current-voltage characteristic of MCT PV device was investigated based on the current-voltage characteristics of MCT Schottkey barrier. The data of some devices were also discussed.

Keywords

MCT PV device.M-MCT contact current-voltage characteristic

[in Chinese], [in Chinese], [in Chinese]. INFLUENCE OF MS INTERFACE TRANSPORT ON THE CURRENT-VOLTAGE CHARACTERISTIC OF MCT PV DEVICE[J]. Journal of Infrared and Millimeter Waves, 2001, 20(3): 165

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