1Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3Institut für Physik & IMN MacroNano® (ZIK), Technische Universität Ilmenau, Ilmenau 98693, Germany
Jun Liu, Zhijie Wang, Yong Lei. A close step towards industrialized application of solar water splitting[J]. Journal of Semiconductors, 2020, 41(9): 090401
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Fig. 1. Photocatalytic water-splitting activities. (a) Time course of H2 and O2 evolution on SrTiO3:Al loaded with various cocatalysts during photoirradiation. Left, loaded with Rh (0.1 wt%)/Cr2O3 (0.05 wt%) by two-step photodeposition. Middle, loaded with Rh (0.1 wt%)/Cr2O3 (0.05 wt%)/CoOOH (0.05 wt%) by three-step photodeposition. Right, loaded with Rh (0.1 wt%)-Cr (0.1 wt%) oxide by co-impregnation. (b) Ultraviolet-visible diffuse reflectance spectrum of bare SrTiO3:Al (black solid line) and wavelength dependence of external quantum efficiency (EQE) during water splitting on Rh (0.1 wt%)/Cr2O3 (0.05 wt%)/CoOOH (0.05 wt%)-loaded SrTiO3:Al (red symbols).
Fig. 2. Transmission electron microscopy. (a) Selected-area electron diffraction pattern obtained from SrTiO3:Al loaded with Rh (0.1 wt%)/Cr2O3 (0.05 wt%)/CoOOH (0.05 wt%). (b) Corresponding transmission electron microscopy image of a particle. (c) Particle morphology and crystal orientation.
Fig. 3. Simulations of photocarrier distributions in SrTiO3:Al particles. (a) Mapping of conduction-band energy, Ec. (b) Density of electrons (e-), n. (c) Density of holes (h+), p. (d) Energy band diagram. (e) Electron and hole densities as functions of position (x′, y′) with work function difference ΔWel = 0.2 eV. (f) Effect of ΔWel on electron-to-hole-density ratio at the {100} and {110} facets.
Jun Liu, Zhijie Wang, Yong Lei. A close step towards industrialized application of solar water splitting[J]. Journal of Semiconductors, 2020, 41(9): 090401