F. Piva, C. De Santi, M. Deki, M. Kushimoto, H. Amano, H. Tomozawa, N. Shibata, G. Meneghesso, E. Zanoni, M. Meneghini. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation[J]. Photonics Research, 2020, 8(11): 1786
- Photonics Research
- Vol. 8, Issue 11, 1786 (2020)
Fig. 1. Electrical characterization during the stress, in semi-logarithmic scale, carried out before and during the stress experiment at 250 mA. All measurements were taken at 25°C.
Fig. 2. (a) Normalized current at the voltage of 3 V, and (b) normalized series resistance (R s
Fig. 3. Ideality factor at the temperature of 25°C during the stress.
Fig. 4. (a) Optical power (OP) during the stress at the temperature of 25°C. (b) Normalized optical power at three different current levels: 10 μA, 1 mA, and 100 mA.
Fig. 5. Simplified representation of the increase in the injection barrier due to the presence of a distributed negative charge near/within the active region.
Fig. 6. Schematic representation of the reactions.
Fig. 7. Optical degradation measured at 25°C and 75°C during stress at 250 mA. Solid lines represent the solution of the system of ODEs reported above, showing a good agreement with the experimental data.
Fig. 8. Fitting of the optical power data at low current level with the function proposed in Ref. [24].
Fig. 9. Power spectral density during the aging at the current of 1 mA and at the temperature of 25°C.
Fig. 10. (a) SSPC measurement during the aging, and (b) correlation between the second defect from SSPC and the optical power at low current levels.
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