Junjie Si. Novel InSb-based infrared detector materials (Invited)[J]. Infrared and Laser Engineering, 2022, 51(1): 20210811
- Infrared and Laser Engineering
- Vol. 51, Issue 1, 20210811 (2022)
Fig. 1. Crystal structure of InSb
Fig. 2. Brillouin zone (a) and band structure (b) of InSb crystal (calculated by empirical pseudopotential method without spin-orbit coupling)
Fig. 3. Band gap of energy valley of crystal InSb
Fig. 4. Band gap of InSb crystal variation with temperature
Fig. 5. Fermi level of InSb crystal variation with temperature for different shallow donor or acceptor concentration
Fig. 6. Band gap of some typical compound semiconductors and their corresponding lattice constant
Fig. 7. Minimum direct band gap and electron effective mass at Γ -point of In1−x Gax Sb alloy variation with GaSb content x
Fig. 8. Phase relation in the pseudo-binary system of InSb-GaSb
Fig. 9. Lattice constant of In1−x Gax Sb alloy variation with Ga composition
Fig. 10. Band gap of InGaNSb alloy and its lattice constant
Fig. 11. Band gap of In1−x Alx Sb alloy variation with Al composition
Fig. 12. 320×256 MBE grown InSb (a) and In1−x Alx Sb (b) IRFPA dark current distribution (@90 K, −0.168 V bias (a) and −0.183 V bias (b))
Fig. 13. Band gap of InAs1−x Sbx alloy variation with Sb compositionx
Fig. 14. Phase relation in the pseudo-binary system of InSb-InAs
Fig. 15. Mobility of InAs1−x Sbx alloy variation with Sb composition
Fig. 16. Band gap of quarternary alloy (GaSb)1−z (InAs0.91Sb0.09)z variation with composition z
Fig. 17. Spectral response curve of InBix Sb1−x
Fig. 18. Band gap of InBi0.04Sb0.96 alloy variation with temperature
Fig. 19. Phase relation in the pseudo-binary material of InSb-TlSb
Fig. 20. Energy band diagram of In1−x Tlx Sb and Hg1−x Cdx Te with 0.1 eV band gap
Fig. 21. Band gap of In1−x Tlx Sb alloy variation with Tl composition x
Fig. 22. Spectral response curve of In1−x Tlx Sb photo diode
Fig. 23. Band gap of InNx Sb1−x alloy variation with N composition
Fig. 24. Band gap of InNx Sb1−x alloy variation before and after annealing
Fig. 25. Band gap of InSb quantum wire variation with wire diameter
Fig. 26. Photo response curve of InSb quantum wire with infrared light incident frequency under room temperature @1 Hz
Fig. 27. InSb self-assembly QD barrier detector. QD-BIRD structure ( Left), Band diagram of QD-BIRD absorption zone (upper right), Band diagram of InSb QD area in the absorption zone (lower right)
Fig. 28. PL spectrum (a) and quantum efficiency at different working temperatures (b) of InSb QD barrier detector
Fig. 29. Transmission electron microscope (TEM) photos of InSb colloidal quantum dots (a), high resolution TEM image (b), light absorption spectrum (black line) and photofluorescence spectrum (red line) (c)
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Table 1. Basic characteristic parameter of InSb crystal
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Table 2. Characteristic parameters of InAs0.35Sb0.65
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