There are more and more demands for micro integrated filter because of the infrared hyperspectral application. In 1.9~2.4 μm infrared spectrum, 32-channnel integrated infrared filter is designed by changing the thickness of spacer layer and maintaining the basic optical layers the same. The change of the spacer layer can be realized by etching or depositing. Considering the error during fabricating, the spectrum can still meet the requirements. The half power bandwidth is 5~8 nm, the spectrum curve across-points are lower than 15% in transmittance mostly. With the current technique, both the etching and the depositing methods can be used to fabricate the integrated infrared filter.