β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

Jiaqi Wei; Kumsong Kim; Fang Liu; Ping Wang; Xiantong Zheng; Zhaoying Chen; Ding Wang; Ali Imran; Xin Rong; Xuelin Yang; Fujun Xu; Jing Yang; Bo Shen; Xinqiang Wang

doi:10.1088/1674-4926/40/1/012802

Journals >Journal of Semiconductors >Volume 40 >Issue 1 >Page 012802 > Article

Journal of Semiconductors
Vol. 40, Issue 1, 012802 (2019)

β-Ga₂O₃ thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

Jiaqi Wei, Kumsong Kim, Fang Liu, Ping Wang, Xiantong Zheng, Zhaoying Chen, Ding Wang, Ali Imran, Xin Rong, Xuelin Yang, Fujun Xu, Jing Yang, Bo Shen, and Xinqiang Wang

Author Affiliations

State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

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DOI: 10.1088/1674-4926/40/1/012802 Cite this Article

Jiaqi Wei, Kumsong Kim, Fang Liu, Ping Wang, Xiantong Zheng, Zhaoying Chen, Ding Wang, Ali Imran, Xin Rong, Xuelin Yang, Fujun Xu, Jing Yang, Bo Shen, Xinqiang Wang. β-Ga₂O₃ thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy[J]. Journal of Semiconductors, 2019, 40(1): 012802 Copy Citation Text

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Abstract

Monoclinic gallium oxide (Ga₂O₃) has been grown on (0001) sapphire (Al₂O₃) substrate by plasma-assisted molecular beam epitaxy (PA-MBE). The epitaxial relationship has been confirmed to be [010](

) β-Ga₂O₃||[

](0001)Al₂O₃ via in-situ reflection high energy electron diffraction (RHEED) monitoring and ex-situ X-ray diffraction (XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum (FWHM) of XRD ω-rocking curve of (

) plane and root mean square (RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C, respectively. Room temperature cathodoluminescence measurement shows an emission at ~417 nm, which is most likely originated from recombination of donor–acceptor pair (DAP).

$ 2{\rm{Ga}}\left( {\rm{g}} \right) + 3{\rm{O}}\left( {\rm{g}} \right) \to {\rm{G}}{{\rm{a}}_2}{{\rm{O}}_3}\left( {\rm{s}} \right){\rm{ }}, $

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