• Microelectronics
  • Vol. 51, Issue 1, 101 (2021)
LI Mengyao, LIU Yuntao, and JIANG Zhonglin
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.200092 Cite this Article
    LI Mengyao, LIU Yuntao, JIANG Zhonglin. A PD SOI Device for Anti-Total Dose Irradiation[J]. Microelectronics, 2021, 51(1): 101 Copy Citation Text show less
    References

    [2] SIMOEN E, GAILLARDIN M, PAILLET P, et al. Radiation effects in advanced multiple gate and silicon-on-insulator transistors [J]. IEEE Trans Nucl Sci, 2013, 60(3): 1970-1991.

    [4] ROH Y T, LEE H C. Layout modification of a PD-SOI n-MOSFET for total ionizing dose effect hardening [J]. IEEE Trans Elec Dev, 2019, 66(1): 308-315.

    [5] LI C, MIKHAILOV M M, NESHCHIMENKO V V. Radiation stability of SiO2 micro-and nanopowders under electron and proton exposure [J]. Nucl Instrum & Method Phys Res Sect B: Beam Interact Mater & Atom, 2014, 319(15): 123-127.

    [6] ESQUEDA I S, BARNABY H J, HOLBERT K E, et al. Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors [J]. IEEE Trans Nucl Sci, 2011, 58(2): 499-505.

    [7] BARNABY H J. Total-ionizing-dose effects in modern CMOS technologies [J]. IEEE Trans Nucl Sci, 2006, 53(6): 3103-3121.

    [9] LEE M S, LEE H C. Dummy gate-assisted n-MOSFET layout for a radiation-tolerant integrated circuit [J]. IEEE Trans Nucl Sci, 2014, 60(4): 3084-3091.

    [11] WANG Q Q, LIU H X , WANG S L, et al. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates [J]. Nucl Sci & Techniq, 2017, 28(10): 151-155.

    LI Mengyao, LIU Yuntao, JIANG Zhonglin. A PD SOI Device for Anti-Total Dose Irradiation[J]. Microelectronics, 2021, 51(1): 101
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