A new method, laserassisted wet twostep etching, which can wipe off the crystal tropism influence in laser induced wetchemical etching is proposed. The essential of this method is to lengthen the etching time in noncrystaltropism direction and assure the same etching degree as that in the crystaltropism direction. Theoretical analysis and experimental result show that the crystal tropism influences the etched image greatly; and the twostep method can wipe off the crystal tropism influence effectively; and also, compared with the adopted normally surface mask film and laser intensity distributing accommodation, the twostep etching method can deal with the inside crystal tropism influence, operate easily and the requirement for equipment is low. The laserassisted wet twostep etching can overcome the disadvantages of conventional ones, and wipe off the crystal tropism influence and is useful in the fabrication of specialstructured optoelectronic devices and optoelectronic integration.