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Journals >Journal of Semiconductors >Volume 43 >Issue 10 >Page 102001 > Article

Journal of Semiconductors
Vol. 43, Issue 10, 102001 (2022)

Polarization sensitive photodetector based on quasi-1D ZrSe₃

Xingang Wang^1、4, Tao Xiong², Kaiyao Xin^2、3, Juehan Yang², Yueyang Liu², Zeping Zhao^1、*, Jianguo Liu^1、**, and Zhongming Wei^2、3、***

Author Affiliations

¹The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

³Sino-Danish Center for Education and Research, Sino-Danish College University of Chinese Academy of Sciences, Beijing 100049, China

⁴Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/43/10/102001 Cite this Article

Xingang Wang, Tao Xiong, Kaiyao Xin, Juehan Yang, Yueyang Liu, Zeping Zhao, Jianguo Liu, Zhongming Wei. Polarization sensitive photodetector based on quasi-1D ZrSe₃[J]. Journal of Semiconductors, 2022, 43(10): 102001 Copy Citation Text

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References

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Xingang Wang, Tao Xiong, Kaiyao Xin, Juehan Yang, Yueyang Liu, Zeping Zhao, Jianguo Liu, Zhongming Wei. Polarization sensitive photodetector based on quasi-1D ZrSe₃[J]. Journal of Semiconductors, 2022, 43(10): 102001

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