• Journal of Infrared and Millimeter Waves
  • Vol. 24, Issue 3, 174 (2005)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PHOTOLUMINESCENCE OF LOW-DIMENSIONAL SEMICONDUCTOR STRUCTURES UNDER PRESSURE[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 174 Copy Citation Text show less
    References

    [1] Li G H, Jiang D S, Han H X, et al. Type Ⅰ--type Ⅱtransition of GaAs/AlAs short period superlattices investigated by photoluminescence spectroscopy under hydrostatic pressure [J]. Phys. Rev. ,1989,B40:10430-10435.

    [4] Su F H, Fang Z L, Ma B S, et al. Temperature and pressure behavior of the emission bands from Mn-, Cu-, and Eu-doped ZnS nanocrystals [J]. J. Appl. Phys., 2004,95( 7 ) :3344-3349.

    [5] Chen Ye, Zhang W, Li G H, et al. Pressure behaviour of self-assembled InAlAs/AlGaAs quantum dots with multimodal distribution in size [J]. J. Phys.: Condens. Matter,2000,12: 3173-3180.

    [6] Chen W, Su F H, Li G H, et al. Temperature and pressure dependences of the Mn2+ and donor-acceptor emissions in ZnS: Mn nanoparticles [J]. J. Appl. Phys. , 2002,92:1950-1955.

    [7] Chen W, Malm J O, Zwiller V, et al. , Energy structure and fluorescence of Eu2 + in ZnS: Eu nanoparticles [J].Phys. Rev. , 2000,B61: 11021-11024.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PHOTOLUMINESCENCE OF LOW-DIMENSIONAL SEMICONDUCTOR STRUCTURES UNDER PRESSURE[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 174
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