[1] Zhang K F, Lin X C, Zhang L P, et al. Study of mobility spectra of slight p-type and low mobility n-type bulk HgCdTe materials [J]. Infrared, 2011, 32(6):1.
[2] Schmit J , Kruse P , Stelzer E. Development of a 0.1eV Bandgap Semiconductor at the Honeywell Research Center (1959 -1985) [J]. Proc. of SPIE. 7298:72982R1-13.
[3] Bratt P R, Johnson S M , Rhiger D R, et al. Historical perspectives on HgCdTe material and device development at Raytheon Vision Systems [J]. Proc. of SPIE. 7298:72982U1-35.
[4] Jung Y C, Yoon S J, Suh S H. et al. The effect of ammonium sulfide treatment on interfacial proterties in ZnS/HgCdTe heterostructure[J]. J Electroceram, 2006, 17: 1041.
[5] Voitsekhovskii A V, Nesmelov S N, Dzyadukh S M. The influence of resistance of the epitaxial-film volume on the capacity-voltage characteristics of the HgCdTe/AOF and HgCdTe/SiO2/Si3N4 MIS structures [J]. Russian Physics Journal, 2005, 48(6): 584.
[8] Nemirovsky Y .Bahir G, Passivation of mercury cadmium telluride surfaces[J], J.Vac.Sci.Technol.1989,A7(2):450.
[10] Lopes V C, Syllaios A J , Chen M C. Minority carrier lifetime in mercury cadmium telluride[J], Semicond. Sci. Technol. 1993, 8: 824.