• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 4, 559 (2005)
[in Chinese]1、*, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]2
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on raw material preparation method, crystal growth and structure of the scandium-containing garnet Nd:GSGG[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 559 Copy Citation Text show less
    References

    [1] Kaminskii A A, Kh. Bagdasarov S, et al. Luminescence and stimulated emission of Nd3+ ions in Gd3Sc2Ga3O12crystals [J]. Phys. Status Solidi (a), 1976, 34: K109-K114.

    [2] Caffey D P, Utano R A. Diode array side-pumped neodymium-doped gadolinium scandium gallium garnet rod and slab lasers [J]. App. Phys. Lett., 1990, 56(9): 808-810.

    [4] Stokowski S E, et al. Growth and characterization of large Nd, Cr:GSGG crystals for high-average-power slab lasers [J]. IEEE J. Quantum Electronics 1988, 24(6): 934-948.

    [6] Brandle C D, Barns R L. Crystal stoichiometry and growth of rare-earth garnets contaning scandium [J]. J.Crystal Growth, 1973, 20: 1-5.

    [7] Fratello V J, Brandle C D, Valentino A J. Growth of congruently melting gadolinium scandium garnet [J]. J.Crystal Growth, 1987, 80: 26-32.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on raw material preparation method, crystal growth and structure of the scandium-containing garnet Nd:GSGG[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 559
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