• Microelectronics
  • Vol. 53, Issue 1, 8 (2023)
CHEN Jiehao1, GUO Zhihong2, and HU Hao2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: 10.13911/j.cnki.1004-3365.210492 Cite this Article
    CHEN Jiehao, GUO Zhihong, HU Hao. A Segmented Temperature Compensated Bandgap Reference with High PSRR[J]. Microelectronics, 2023, 53(1): 8 Copy Citation Text show less
    References

    [1] WIDLAR R, New developments in IC voltage regulators [J]. IEEE J Sol Sta Circ, 1971, 6(1): 2-7.

    [2] ZHU G, YANG Y, ZHANG Q. A 4.6-ppm/℃ high-order curvature compensated bandgap reference for BMIC [J]. IEEE Trans Circ Syst II:Expr Brie, 2019, 66(9): 1492-1496.

    [3] LIU X, YANG S, WANG J, et al. A high-order curvature-compensated voltage reference based on lateral BJT [J]. AEU-Int J Elec Commun, 2020, 124(1): 153325.

    [4] WU H, LIU H. An improved bandgap reference with curvature-compensated and high power supply rejection [J]. J Circ, Syst Comput, 2016, 25(11): 1650147.

    [5] SHI Y, LI S, CAO J, et al. A 180 nm self-biased bandgap reference with high PSRR enhancement [J]. Nanoscale Research Lett, 2020, 15(1): 104.

    [7] BROKAW A P. A simple three-terminal IC bandgap reference [J]. IEEE J Sol Sta Circ, 1974, 9(6): 388-393.

    [8] TSIVIDIS Y P. Accurate analysis of temperature effects in IC-VBE characteristics with application to bandgap reference sources [J]. IEEE J Sol Sta Circ,1980,15(6): 1076-1084.

    CHEN Jiehao, GUO Zhihong, HU Hao. A Segmented Temperature Compensated Bandgap Reference with High PSRR[J]. Microelectronics, 2023, 53(1): 8
    Download Citation