• Microelectronics
  • Vol. 53, Issue 1, 8 (2023)
CHEN Jiehao1, GUO Zhihong2, and HU Hao2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210492 Cite this Article
    CHEN Jiehao, GUO Zhihong, HU Hao. A Segmented Temperature Compensated Bandgap Reference with High PSRR[J]. Microelectronics, 2023, 53(1): 8 Copy Citation Text show less

    Abstract

    A segmented temperature compensated bandgap reference with high PSRR was designed in Huahong 0.18 μm BCD technology. The circuit was powered by 5 V power supply, and the reference output voltage was 1.256 V. The simulation results show that in the temperature range of -45-+125 ℃, the temperature coefficient of the traditional structure is 2.048×10-5/℃ at the TT corner. The temperature coefficient of the bandgap reference with new piecewise temperature compensation is 3.631×10-6/℃, which is 82.3% lower than that of the traditional structure. The static power consumption is 220 μW. The PSRR can reach -102 dB at low frequency, and the worst PSRR is -30 dB at 350 kHz. The bandgap reference is suitable for analog integrated circuits of high precision and high current switching power supply.
    CHEN Jiehao, GUO Zhihong, HU Hao. A Segmented Temperature Compensated Bandgap Reference with High PSRR[J]. Microelectronics, 2023, 53(1): 8
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