• Infrared and Laser Engineering
  • Vol. 50, Issue S2, 20210296 (2021)
Hao Chang, Yifu Chen, Weijing Zhou*, and Wei Guo
Author Affiliations
  • State Key Laboratory of Laser Propulsion & its Application, Department of Aerospace Science and Technology, Space Engineering University, Beijing 101416, China
  • show less
    DOI: 10.3788/IRLA20210296 Cite this Article
    Hao Chang, Yifu Chen, Weijing Zhou, Wei Guo. Damage characteristics of the solar cells irradiated by nanosecond pulsed lasers and the effects on photoelectric conversion[J]. Infrared and Laser Engineering, 2021, 50(S2): 20210296 Copy Citation Text show less
    References

    [1] Fatemi N S, Pollard H E, Hou H Q, et al. Solar array trades between very highefficiency multijunction Si space solar cells[C] IEEE Photovoltaic Specialists Conference. IEEE, 2000.

    [2] S Scholz, J Bauer, G Leibiger, et al. MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer. Crystal Research and Technology, 41, 111-116(2006).

    [3] W R Macauley. Crafting the future: Envisioning space exploration in post-war Britain. History and Technology, 28, 281-309(2012).

    [4] X B Xiang, W H Du, X L Chang, et al. The study on high efficient GaAs/Ge solar cells. Solar Energy Materials and Solar Cells, 68, 97-103(2001).

    [5] R Tyagi, M Singh, M Thirumavalavan, et al. The influence of As and Ga prelayers on the metal-organic chemical vapor deposition of GaAs/Ge. Journal of Electronic Materials, 21, 234-237(2002).

    [6] Navid S F. Solar array trades between very highefficiency multijunction Si space solar cells[C] Proceedings of the 28th IEEE Photovoltaic Specialists Conference, 2000: 10831086.

    [7] R C Knechtli, R Y Loo, G S Kamath. High-efficiency GaAs solar cells. IEEE Transactions on Electron Devices, 31, 577-588(1984).

    [8] H Iwata, K Asakawa. Accumulative damage of GaAs and InP surfaces induced by multiple-laser-pulse irradiation. Japanese Journal of Applied Physics, 47, 2161-2167(2008).

    [9] G Li, H Zhang, G Zhou, et al. Research on influence of parasitic resistance of InGaAs solar cells under continuous wave laser irradiation. Journal of Physics: Conference Series, 84, 12-14(2017).

    [10] Yunpeng Li, Jianmin Zhang, Pengcheng Dou, et al. Thermal damage mechanism of single junction GaAs solar cells irradiated by continuous wave laser. Infrared and Laser Engineering, 47, 0506001(2018).

    [11] Huan Yang, Jian Lu, Dayong Zhou, et al. Experimental study about effect of 1070 nm CW laser irradiation on three-junction GaAs solar cells. Laser Technology, 41, 318-321(2017).

    [12] Weiming Lu, Xing Li, Fute Zhang, et al. Defect detection of solar cell based on electroluminescence and thermography imaging with different bias voltage. Chinese Journal of Luminescence, 35, 111-119(2014).

    [13] Y H Li, M Pan, A S Pang, et al. The application of electroluminescence imaging to detection the hidden defects in silicon solar cells. Chinese Journal of Luminescence, 32, 378-382(2011).

    [14] Daoyuan Tang, Jianming Xu, Yunpeng Li, et al. Damage effects of tri-junction GaAs solar cells irradiated by continuous- wave laser in vacuum. Aerospace Shanghai, 37, 54-60(2020).

    [15] Qiu Dongdong. Damage effects research of silicon solar cells silicon CCD induced by laser[D]. Changsha: National University of Defense Technology, 2010. (in Chinese)

    CLP Journals

    [1] Weijing Zhou, Ming Wen, Hao Chang, Yifu Chen, Gang Ji, Yingjie Ma, Zhilong Jian, Yujie Liao. Damage characteristics of solar cells irradiated by picosecond pulsed lasers (invited)[J]. Infrared and Laser Engineering, 2023, 52(2): 20210870

    [2] Jian Lu, Zhijian Xie, Hongchao Zhang. Light beam induced current mapping to characterize damage characteristics of silicon solar cell irradiated by continuous-wave laser[J]. Infrared and Laser Engineering, 2022, 51(2): 20220022

    Hao Chang, Yifu Chen, Weijing Zhou, Wei Guo. Damage characteristics of the solar cells irradiated by nanosecond pulsed lasers and the effects on photoelectric conversion[J]. Infrared and Laser Engineering, 2021, 50(S2): 20210296
    Download Citation