Hao Chang, Yifu Chen, Weijing Zhou, Wei Guo. Damage characteristics of the solar cells irradiated by nanosecond pulsed lasers and the effects on photoelectric conversion[J]. Infrared and Laser Engineering, 2021, 50(S2): 20210296

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- Infrared and Laser Engineering
- Vol. 50, Issue S2, 20210296 (2021)

Fig. 1. Three-junction GaInP2/GaAs/Ge cell sample

Fig. 2. Variation curves of voltage-current characteristics of the non-gate line part of a triple-junction GaInP2/GaAs/Ge cell irradiated by laser

Fig. 3. Variation curves of power-voltage characteristics of the non-gate line part of a triple-junction GaInP2/GaAs/Ge cell irradiated by laser

Fig. 4. Morphology changes of the non-gate line part of the triple junction GaInP2/GaAs/Ge cell irradiated by nanosecond laser. (a) Original shape of the cell; (b)-(i) Morphology changes by laser irradiation when laser energy density is 3.3, 9.2, 19.4, 33.6, 66.5, 105.5, 129.5, 163.5 J·cm−2respectively
![[in Chinese]](/Images/icon/loading.gif)
Fig. 5. [in Chinese]

Fig. 5. Electroluminescence changes of the non-gate line part of the triple junction GaInP2/GaAs/Ge cell irradiated by nanosecond laser. (a) Electroluminescence results with no laser ablation; (b)-(h) Electroluminescence results by laser irradiation when laser energy density is 3.3, 19.4, 33.6, 66.5, 105.5, 129.5, 163.5 J·cm−2respectively

Fig. 6. Relative luminous intensity changes of the non-gate line part of the three-junction GaInP2/GaAs/Ge cell irradiated by laser

Fig. 7. Variation curves of voltage-current characteristics of the gate line part of a triple-junction GaInP2/GaAs/Ge cell irradiated by laser

Fig. 8. Variation curves of power-voltage characteristics of the gate line part of a triple-junction GaInP2/GaAs/Ge cell irradiated by laser

Fig. 9. Morphology changes of the gate line part of the triple junction GaInP2/GaAs/Ge cell irradiated by nanosecond laser with different laser energy densities

Fig. 10. Electroluminescence changes of the gate line part of the triple junction GaInP2/GaAs/Ge cell irradiated by nanosecond laser. (a) Electroluminescence results with no laser ablation; (b)-(d) Electroluminescence results by laser irradiation when laser energy density is 3.3, 6.5, 105.5 J·cm−2 respectively

Fig. 11. Relative luminous intensity changes of the gate line part of the three-junction GaInP2/GaAs/Ge cell irradiated by laser

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