• Acta Optica Sinica
  • Vol. 37, Issue 11, 1124002 (2017)
Peng Wan and Cuihong Yang*
Author Affiliations
  • School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing, Jiangsu 210044, China
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    DOI: 10.3788/AOS201737.1124002 Cite this Article Set citation alerts
    Peng Wan, Cuihong Yang. Properties of Graphene TE Mode Surface Plasmons and Surface Plasmon Waveguides[J]. Acta Optica Sinica, 2017, 37(11): 1124002 Copy Citation Text show less
    Slab structure of graphene
    Fig. 1. Slab structure of graphene
    Change of graphene conductivity with frequency at different chemical potentials. (a) Real part; (b) imaginary part
    Fig. 2. Change of graphene conductivity with frequency at different chemical potentials. (a) Real part; (b) imaginary part
    Dispersion of TE mode in a suspended graphene structure varies with frequency at different chemical potentials. (a) Effective refractive index neff; (b) Im(β/k0)
    Fig. 3. Dispersion of TE mode in a suspended graphene structure varies with frequency at different chemical potentials. (a) Effective refractive index neff; (b) Im(β/k0)
    Dispersion of TE mode varies with frequency in a two-layer dielectric structure as ε1=ε2 (the refractive indices of Si, SiC and SiO2 are 3.67, 2.57 and 1.53, respectively; μc=0.5 eV). (a) neff; (b) Im(β/k0)
    Fig. 4. Dispersion of TE mode varies with frequency in a two-layer dielectric structure as ε1=ε2 (the refractive indices of Si, SiC and SiO2 are 3.67, 2.57 and 1.53, respectively; μc=0.5 eV). (a) neff; (b) Im(β/k0)
    Dispersion of TE mode varies with frequency as ε1≈ε2 [ε1(SiO2)=2.3409; ε2(SiO2) are 2.3409, 2.3410, 2.3411, and 2.3412, respectively; μc=0.5 eV]. (a) neff; (b) Im(β/k0)
    Fig. 5. Dispersion of TE mode varies with frequency as ε1≈ε2 [ε1(SiO2)=2.3409; ε2(SiO2) are 2.3409, 2.3410, 2.3411, and 2.3412, respectively; μc=0.5 eV]. (a) neff; (b) Im(β/k0)
    Dispersion of TE mode varies with frequency in the waveguide with and without graphene in the interfaces a and b (n3=1.460, μc=0.5 eV). (a) neff; (b) Im(β/k0)
    Fig. 6. Dispersion of TE mode varies with frequency in the waveguide with and without graphene in the interfaces a and b (n3=1.460, μc=0.5 eV). (a) neff; (b) Im(β/k0)
    Dispersion of TE mode varies with frequency for different dielectric constant n3 in substrate waveguide with and without graphene in the interface b (μc=0.5 eV). (a) neff; (b) Im(β/k0)
    Fig. 7. Dispersion of TE mode varies with frequency for different dielectric constant n3 in substrate waveguide with and without graphene in the interface b (μc=0.5 eV). (a) neff; (b) Im(β/k0)
    Dispersion of TE mode varies with frequency at different chemical potentials of graphene in the interface b [μc(a)=0.2 eV, n3=1.460]. (a) neff; (b) Im(β/k0)
    Fig. 8. Dispersion of TE mode varies with frequency at different chemical potentials of graphene in the interface b [μc(a)=0.2 eV, n3=1.460]. (a) neff; (b) Im(β/k0)
    Peng Wan, Cuihong Yang. Properties of Graphene TE Mode Surface Plasmons and Surface Plasmon Waveguides[J]. Acta Optica Sinica, 2017, 37(11): 1124002
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