Zhuolin Jiang, Xiangnan Li, Xuanze Zhou, Yuxi Wei, Jie Wei, Guangwei Xu, Shibing Long, Xiaorong Luo. Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress[J]. Journal of Semiconductors, 2023, 44(7): 072803
- Journal of Semiconductors
- Vol. 44, Issue 7, 072803 (2023)
Fig. 1. (Color online) (a) Cross-sectional view of the proposed NiO/β-Ga2O3 HJ-FET and the main fabrication process flows. Schematic representation of the testing method for the analysis instability under NBS at (b) single pulse, and (c) multiple pulses with a prolonged ts.
Fig. 2. (Color online) Measured DC characteristics: (a) log-scale transfer characteristics and (b) output characteristics.
Fig. 3. (Color online) Measured (a) VGS-IDS and (b) VGS-IGS curves after NBS as a function of tr. Extracted (c) ∆VTH and (d) IGS, off degradation ratio.
Fig. 4. (Color online) Measured (a) VGS-IDS and (b) VGS-IGS curves after NBS as a function of tr. Extracted (c) ∆VTH and (d) IGS, off degradation ratio.
Fig. 5. (Color online) (a) Measured VGS-IDS curves during NBS at VG,s = -20 V. (b) Extracted ∆VTH.
Fig. 6. (Color online) Schematic cross-sections of NiO/β-Ga2O3 HJ-FET (a) at initial, (b) under NBS, and (c) after NBS, respectively.
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