PHOTOLUMINESCENCE OF LARGE- SIZED INAS/GAAS QUANTUM DOTS UNDER HYDROSTATIC PRESSURE

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[1] Wang X D, Niu Z C, Feng S L, et al. Effect of InxGa1 -xAs (0≤ x ≤ 0.4) capping layers on self-assembled 1.3um wavelength InAs/GaAs quantum islands [J] . J. Cryst.Growth, 2001,223: 363-368.

[2] Lyapin S G, Itskevich I E, Troyan I A, et al. Pressure-induced Γ-Х crossover in self-assembled In (Ga) As/GaAs quantum dots [J] . Phys. Stat. Sol. , 1999, B211: 79-83.

[3] Itskevich I E, Henini M, Carmona H A, et al. Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure [J] . Appl. Phys. Lett., 1997, 70(4): 505-507.

[4] Itskevech I E, Trojan I A, Lyapin S Y, et al. Excited states in self-assembled InAs/GaAs quantum dots under high pressure [J] . Phys. Stat. Sol. , 1999, B211: 73-77.

[5] Manj6n F J, Goni A R, Syassen K, et al. Pressure dependence of photoluminescence spectra of self-assembled InAs/GaAs quantum dots [J] . Phys. Stat. Sol. , 2003, B235(2): 496-500.

[6] Frogley M D, Downers J R, Dunstan D J. Theory of the anomalously low band-gap pressure coefficients in strainedlayer semiconductor alloys [J] . Phys. Rev. , 2000, B62(20): 13612-13616.

[8] Li G H, Goni A R, Syassen K, et al. State mixing in InAs/GaAs quantum dots at the pressure-induced F-X crossing[J]. Phys. Rev., 1994, B50(24) :18420-18425.

[9] Van Camp P E, Van Doren V E, Devreese J T. Pressure depencence of the electronic properties of cubic Ⅲ-Ⅴ In compounds [J] . Phys. Rev. , 1990, B41: 1598.

[10] Edwards A L, Drickamer H G. Effect of pressure on the absorption edges of some Ⅲ-Ⅴ, Ⅱ-Ⅵ, and Ⅰ-Ⅶ compounds [J] . Phys. Rev., 1961, 122(4): 1149-1157.

[11] Tan P H, Brunner K, Bougeard D, et al. Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots [J] . Phys. Rev. , 2003, B68(12):125302-1-125302-6.

[12] Li Guo-Hua, Zheng Bao-Zhen, Han He-Xiang, et al.Photoluminescence studies of InxGa1-xAs/GaAs strained quantum wells under hydrostatic pressure [J] . Phys.Rev. , 1992, B45(7): 3489-3493.

[13] Luo Jun-Wei, Li Shu-Shen, Xia Jian-Bai, et al. Photolnminescence Pressare coefficients of InAs/GaAs quantum dots [J]. Phys Rev. , 2005, ( to be published).