Mode-conversion-based silicon photonic modulator loaded by a combination of lateral and interleaved p-n junctions

Omid Jafari; Sasan Zhalehpour; Wei Shi; Sophie LaRochelle

doi:10.1364/PRJ.414400

Journals >Photonics Research >Volume 9 >Issue 4 >Page 471 > Article

Photonics Research
Vol. 9, Issue 4, 471 (2021)

Mode-conversion-based silicon photonic modulator loaded by a combination of lateral and interleaved p-n junctions

Omid Jafari^1、*, Sasan Zhalehpour², Wei Shi¹, and Sophie LaRochelle¹

Author Affiliations

¹Centre d’optique, photonique et laser (COPL), Université Laval, Québec City, Québec, Canada

²Canada Research Center, Huawei Technologies Canada, Ottawa, Ontario, Canada

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DOI: 10.1364/PRJ.414400 Cite this Article Set citation alerts

Omid Jafari, Sasan Zhalehpour, Wei Shi, Sophie LaRochelle. Mode-conversion-based silicon photonic modulator loaded by a combination of lateral and interleaved p-n junctions[J]. Photonics Research, 2021, 9(4): 471 Copy Citation Text

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References

[10] O. Jafari, J. Lin, W. Shi, S. LaRochelle. Mode-conversion-based silicon photonic modulator using asymmetric Bragg grating and Y-branch. European Conference on Optical Communication, 1-2(2019).