Kai Liu, Huize Fan, Yongqing Huang, Xiaofeng Duan, Qi Wang, Xiaomin Ren, Qi Wei, Shiwei Cai, "A pair of integrated optoelectronic transceiving chips for optical interconnects," Chin. Opt. Lett. 16, 091301 (2018)

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- Chinese Optics Letters
- Vol. 16, Issue 9, 091301 (2018)

Fig. 1. Transceiving chip’s structure.

Fig. 2. Transceiving chip’s reflection spectra: (a) the chip that transmits light at a wavelength around 850 nm and receives light at a wavelength around 805 nm; (b) the chip that transmits light at a wavelength around 805 nm and receives light at a wavelength around 850 nm.

Fig. 3. VCSEL unit’s static performance: (a) the chip that transmits light at a wavelength around 850 nm, where the simulated lasing wavelength is at 848.1 nm; (b) the chip that transmits light at a wavelength around 805 nm, where the simulated lasing wavelength is at 805.3 nm.

Fig. 4. PIN-PD unit’s photo-response performance upon the VCSEL unit’s output light power: (a) the chip that transmits light at a wavelength of 848.1 nm; (b) the chip that transmits light at a wavelength of 805.3 nm.

Fig. 5. Spectral photo-response performances of the integrated transceiving chips: (a) the chip that transmits light at a wavelength of 848.1 nm and receives light at a wavelength around 805 nm; (b) the chip that transmits light at a wavelength of 805.3 nm and receives light at a wavelength around 850 nm.

Fig. 6. Photo-response performances of the integrated transceiving chips with the input light intensity changing from 0 to 1000 W / cm 2 : (a) the chip that receives light at a wavelength of 805.3 nm; (b) the chip that receives light at a wavelength of 848.1 nm.

Fig. 7. Electrical isolation performances of the integrated transceiving chips represented by the analysis of the S21 parameter: (a) the AC signal applied on the VCSEL electrode; (b) the AC signal applied on the PIN-PD electrode.

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