• Journal of Inorganic Materials
  • Vol. 34, Issue 3, 335 (2019)
Xiao-Fang TAN1、2, Si-Chen DUAN1, Hong-Xiang WANG1、3, Qing-Song WU4, Miao-Miao LI5, Guo-Qiang LIU1、3, Jing-Tao XU1、3, Xiao-Jian TAN1、3, He-Zhu SHAO1、3, Jun JIANG1、3, [in Chinese]1、2, [in Chinese]1, [in Chinese]1、3, [in Chinese]4, [in Chinese]5, [in Chinese]1、3, [in Chinese]1、3, [in Chinese]1、3, [in Chinese]1、3, and [in Chinese]1、3
Author Affiliations
  • 11. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 22. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
  • 33. University of Chinese Academy of Sciences, Beijing 100049, China
  • 44. Laboratory of Advanced Materials, Fudan University, Shanghai 200438, China
  • 55. College of Mechanics and Materials, Hohai University, Nanjing 210098, China
  • show less
    DOI: 10.15541/jim20180273 Cite this Article
    Xiao-Fang TAN, Si-Chen DUAN, Hong-Xiang WANG, Qing-Song WU, Miao-Miao LI, Guo-Qiang LIU, Jing-Tao XU, Xiao-Jian TAN, He-Zhu SHAO, Jun JIANG, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Multi-doping in SnTe: Improvement of Thermoelectric Performance due to Lower Thermal Conductivity and Enhanced Power Factor[J]. Journal of Inorganic Materials, 2019, 34(3): 335 Copy Citation Text show less
    Temperature-dependent (a) total thermal conductivities(κtot) and (b) lattice thermal conductivities (κlat) of SnTe1-2xSxSex (x = 0, 0.05, 0.1, and 0.15) samples
    . Temperature-dependent (a) total thermal conductivities(κtot) and (b) lattice thermal conductivities (κlat) of SnTe1-2xSxSex (x = 0, 0.05, 0.1, and 0.15) samples
    Room temperature (a) powder XRD patterns, (b) lattice parameter of SnTe1-2xSxSex (x=0, 0.05, 0.1, and 0.15) samples
    . Room temperature (a) powder XRD patterns, (b) lattice parameter of SnTe1-2xSxSex (x=0, 0.05, 0.1, and 0.15) samples
    Temperature dependent (a) electrical conductivity and (b) Seebeck coefficient of SnTe1-2xSxSex (x=0, 0.05, 0.1, and 0.15) samples
    . Temperature dependent (a) electrical conductivity and (b) Seebeck coefficient of SnTe1-2xSxSex (x=0, 0.05, 0.1, and 0.15) samples
    Temperature-dependent (a) total thermal conductivities(κtot) and (b) lattice thermal conductivities (κlat) of Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
    . Temperature-dependent (a) total thermal conductivities(κtot) and (b) lattice thermal conductivities (κlat) of Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
    Room temperature (a) powder XRD patterns, (b) lattice parameter a, (c) Hall carrier density Np, and (d) carrier mobility μ of Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
    . Room temperature (a) powder XRD patterns, (b) lattice parameter a, (c) Hall carrier density Np, and (d) carrier mobility μ of Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
    Microstructures of Sn0.99In0.01Te0.7S0.15Se0.15(a) Medium-magnification TEM and (b) low-magnification images show the presence of nanoscale secondary phase; The inset in (a) is the SAED pattern along [004]; (c) HRTEM image focusing on the secondary phase with distorted connection between the precipitate and the matrix; The top-right and bottom-right insets are the respective FFT images showing lattice distortion between them; (d) the same TEM image with (c) showing the IFFT image (the bottom-right inset) of the selected region reflecting lattice distortion; and strain maps reflect high strain states inside (e) and around (f) the precipitates
    . Microstructures of Sn0.99In0.01Te0.7S0.15Se0.15
    (a) Medium-magnification TEM and (b) low-magnification images show the presence of nanoscale secondary phase; The inset in (a) is the SAED pattern along [004]; (c) HRTEM image focusing on the secondary phase with distorted connection between the precipitate and the matrix; The top-right and bottom-right insets are the respective FFT images showing lattice distortion between them; (d) the same TEM image with (c) showing the IFFT image (the bottom-right inset) of the selected region reflecting lattice distortion; and strain maps reflect high strain states inside (e) and around (f) the precipitates
    Temperature dependent heat diffusivity of Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
    . Temperature dependent heat diffusivity of Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
    Temperature dependent thermoelectric properties: (a) electrical conductivity σ, (b) the Seebeck coefficients S,(c) the power factors S2σ, and (d) ZT values for Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
    . Temperature dependent thermoelectric properties: (a) electrical conductivity σ, (b) the Seebeck coefficients S,(c) the power factors S2σ, and (d) ZT values for Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
    Room temperature Pisarenko plot for Sn1-yInyTe0.7(SeS)0.15 (y=0,0.0025,0.005,0.01,0.015). The solid curve is experted from Zhang[18]
    . Room temperature Pisarenko plot for Sn1-yInyTe0.7(SeS)0.15 (y=0,0.0025,0.005,0.01,0.015). The solid curve is experted from Zhang[18]
    Samplesρ/(g•cm-3)N/(× 1020, cm-3)μ/(cm2•V-1•s-1)σ/(S•cm-1)S/(μV•K-1)S2σ/(μW•cm-1•K-2)
    y=06.2471.316434807.60.2
    y=0.00256.2091.41002300342.7
    y=0.0056.1611.6571510503.7
    y=0.016.1612.0391240634.9
    y=0.0156.1952.226910714.6
    Table 1. The density ρ, hole concentration n, mobility μ, electrical conductivity σ, Seebeck coefficient S, and power factor S2σ for Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples at room temperature
    Xiao-Fang TAN, Si-Chen DUAN, Hong-Xiang WANG, Qing-Song WU, Miao-Miao LI, Guo-Qiang LIU, Jing-Tao XU, Xiao-Jian TAN, He-Zhu SHAO, Jun JIANG, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Multi-doping in SnTe: Improvement of Thermoelectric Performance due to Lower Thermal Conductivity and Enhanced Power Factor[J]. Journal of Inorganic Materials, 2019, 34(3): 335
    Download Citation