Author Affiliations
11. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China22. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China33. University of Chinese Academy of Sciences, Beijing 100049, China44. Laboratory of Advanced Materials, Fudan University, Shanghai 200438, China55. College of Mechanics and Materials, Hohai University, Nanjing 210098, Chinashow less
. Temperature-dependent (a) total thermal conductivities(κtot) and (b) lattice thermal conductivities (κlat) of SnTe1-2xSxSex (x = 0, 0.05, 0.1, and 0.15) samples
. Room temperature (a) powder XRD patterns, (b) lattice parameter of SnTe1-2xSxSex (x=0, 0.05, 0.1, and 0.15) samples
. Temperature dependent (a) electrical conductivity and (b) Seebeck coefficient of SnTe1-2xSxSex (x=0, 0.05, 0.1, and 0.15) samples
. Temperature-dependent (a) total thermal conductivities(κtot) and (b) lattice thermal conductivities (κlat) of Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
. Room temperature (a) powder XRD patterns, (b) lattice parameter a, (c) Hall carrier density Np, and (d) carrier mobility μ of Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
. Microstructures of Sn0.99In0.01Te0.7S0.15Se0.15
(a) Medium-magnification TEM and (b) low-magnification images show the presence of nanoscale secondary phase; The inset in (a) is the SAED pattern along [004]; (c) HRTEM image focusing on the secondary phase with distorted connection between the precipitate and the matrix; The top-right and bottom-right insets are the respective FFT images showing lattice distortion between them; (d) the same TEM image with (c) showing the IFFT image (the bottom-right inset) of the selected region reflecting lattice distortion; and strain maps reflect high strain states inside (e) and around (f) the precipitates
. Temperature dependent heat diffusivity of Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
. Temperature dependent thermoelectric properties: (a) electrical conductivity σ, (b) the Seebeck coefficients S,(c) the power factors S2σ, and (d) ZT values for Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples
. Room temperature Pisarenko plot for Sn
1-yIn
yTe
0.7(SeS)
0.15 (
y=0,0.0025,0.005,0.01,0.015). The solid curve is experted from Zhang
[18] Samples | ρ/(g•cm-3) | N/(× 1020, cm-3) | μ/(cm2•V-1•s-1) | σ/(S•cm-1) | S/(μV•K-1) | S2σ/(μW•cm-1•K-2) |
---|
y=0 | 6.247 | 1.3 | 164 | 3480 | 7.6 | 0.2 | y=0.0025 | 6.209 | 1.4 | 100 | 2300 | 34 | 2.7 | y=0.005 | 6.161 | 1.6 | 57 | 1510 | 50 | 3.7 | y=0.01 | 6.161 | 2.0 | 39 | 1240 | 63 | 4.9 | y=0.015 | 6.195 | 2.2 | 26 | 910 | 71 | 4.6 |
|
Table 1. The density ρ, hole concentration n, mobility μ, electrical conductivity σ, Seebeck coefficient S, and power factor S2σ for Sn1-yInyTe0.7S0.15Se0.15 (y=0, 0.0025, 0.005, 0.01, and 0.015) samples at room temperature