Genquan Han, Tiangui You, Yibo Wang, Zheng-Dong Luo, Xin Ou, Yue Hao. Heterogeneous integration technology for the thermal management of Ga2O3 power devices[J]. Journal of Semiconductors, 2023, 44(6): 060301
- Journal of Semiconductors
- Vol. 44, Issue 6, 060301 (2023)
![(Color online) The process flow for transferring β-Ga2O3 thin film onto SiC (or Si) by ion-cutting. Reprinted from Xu et al.[4]. Copyright 2021, with permission from IEEE.](/richHtml/jos/2023/44/6/060301/jos_44_6_060301_f1.jpg)
Fig. 1. (Color online) The process flow for transferring β-Ga2O3 thin film onto SiC (or Si) by ion-cutting. Reprinted from Xu et al.[4]. Copyright 2021, with permission from IEEE.
![(Color online) Benchmarking the measured μeff of GaOSiC MOSFETs against the reported Hall mobility and μeff of bulk β-Ga2O3 materials and devices (data from Ref. [7] and references therein). Reprinted from Wang et al.[7]. Copyright 2021, with permission from IEEE.](/richHtml/jos/2023/44/6/060301/jos_44_6_060301_f2.jpg)
Fig. 2. (Color online) Benchmarking the measured μeff of GaOSiC MOSFETs against the reported Hall mobility and μeff of bulk β-Ga2O3 materials and devices (data from Ref. [7] and references therein). Reprinted from Wang et al.[7]. Copyright 2021, with permission from IEEE.
![(Color online) Benchmarking RON,sp versus Vbr for the heterogeneous GaOSiC MOSFETs with the reported β-Ga2O3 transistors (data from Ref. [10] and references therein). Reprinted from Wang et al.[10]. Copyright 2022, with permission from IEEE.](/Images/icon/loading.gif){kind=icon}
Set citation alerts for the article
Please enter your email address
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20