• Acta Optica Sinica
  • Vol. 33, Issue 9, 922005 (2013)
Cao Zhen*, Li Yanqiu, and Liu Fei
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/aos201333.0922005 Cite this Article Set citation alerts
    Cao Zhen, Li Yanqiu, Liu Fei. Manufacturable Design of 16~22 nm Extreme Ultraviolet Lithographic Objective[J]. Acta Optica Sinica, 2013, 33(9): 922005 Copy Citation Text show less
    References

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    [3] Hans Meiling, Henk Meijer, Vadim Banine, et al.. First performance results of the ASML alpha demo tool [C]. SPIE, 2006, 6151: 615108.

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    [5] Christian Wagner, Noreen Harned, Peter Kuerz, et al.. EUV into production with AMSL′s NXE platform [C]. SPIE, 2010,7636: 76361H.

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    [7] Yang Xiong, Xing Tingwen. Design of extreme-ultraviolet lithographic objectives [J]. Acta Optica Sinica, 2009, 29(9): 2520-2523.

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    [9] Takaharu Miura, Katsuhiko Murakami, Hidemi Kawai, et al.. Nikon EUVL development progress update [C]. SPIE, 2010, 7636: 76361G.

    [10] Lawrence Berkeley National Laboratory′s Center for X-Ray Optics. Interactions with Matter: The Index of Refraction for a Compound Material [DB/OL]. [2013-03-20]. http://henke.lbl.gov/optical_constants/.

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    [12] Takahiro Sasaki. Projection Optical System Exposure Apparatus and Device Fabricating Method: U. S., 7554649 [P]. 2009-06-30.

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    [14] Holger Glatzel, Dominic Ashworth, Mark Bremer, et al.. Projection optics for extreme ultraviolet lithography micro field exposure tools with a numerical aperture of 0.5 [C]. SPIE, 2013, 8679: 867917.

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    [17] Xu Weicai, Huang Wei, Yang Wang. Magnification tolerancing and compensation for the lithographic projection lens [J]. Acta Optica Sinica, 2011, 31(11): 1122003.

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    Cao Zhen, Li Yanqiu, Liu Fei. Manufacturable Design of 16~22 nm Extreme Ultraviolet Lithographic Objective[J]. Acta Optica Sinica, 2013, 33(9): 922005
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