[1] W Jiang, T Zheng, B Wu, et al. A versatile photodetector assisted by photovoltaic and bolometric effects. Light: Science & Applications, 9, 160-160(2020).

[2] M Long, P Wang, H Fang, et al. Progress, challenges, and opportunities for 2D material based photodetectors. Advanced Functional Materials, 29, 1803807(2019).

[3] J Wang, J Han, X Chen, et al. Design strategies for two-dimensional material photodetectors to enhance device performance. InfoMat, 1, 33-53(2019).

[4] J Fang, Z Zhou, M Xiao, et al. Recent advances in low-dimensional semiconductor nanomaterials and their applications in high-performance photodetectors. InfoMat, 2, 291-317(2020).

[5] M Rezaei, S Bianconi, L J Lauhon, et al. A new approach to designing high-sensitivity low-dimensional photodetectors. Nano Letters, 21, 9838-9844(2021).

[6] M Zhang, X Liu, X Duan, et al. Schottky-contacted WSe₂ hot-electron photodetectors with fast response and high sensitivity. ACS Photonics, 9, 132-137(2022).

[7] Y Xu, C Liu, C Guo, et al. High performance near infrared photodetector based on in-plane black phosphorus p-n homojunction. Nano Energy, 70, 104518(2020).

[8] Y Chen, W Ma, C Tan, et al. Broadband Bi₂O₂Se photodetectors from infrared to terahertz. Advanced Functional Materials, 31, 2009554(2021).

[9] D Liu, F Liu, Y Liu, et al. Schottky-contacted high-performance GaSb nanowires photodetectors enabled by lead-free all-inorganic perovskites decoration. Small, 18, 2200415(2022).

[10] Y Yin, Y Guo, D Liu, et al. Substrate-free chemical vapor deposition of large-scale III-V nanowires for high-performance transistors and broad-spectrum photodetectors. Advanced Optical Materials, 10, 2102291(2022).

[11] J Sun, M Han, M Peng, et al. Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs_1-xSb_x nanowires. Nano Research, 14, 3961-3968(2021).

[12] J Sun, M Peng, Y Zhang, et al. Ultrahigh hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors. Nano Letters, 19, 5920-5929(2019).

[13] J Wang, H Fang, X Wang, et al. Recent progress on localized field enhanced two-dimensional material photodetectors from ultraviolet-visible to infrared. Small, 13, 1700894(2017).

[14] X Wang, P Wang, J Wang, et al. Ultrasensitive and broadband MoS₂ photodetector driven by ferroelectrics. Advanced Materials, 27, 6575-6581(2015).

[15] D Zheng, J Wang, W Hu, et al. When nanowires meet ultrahigh ferroelectric field-high-performance full-depleted nanowire photodetectors. Nano Letters, 16, 2548-2555(2016).

[16] J Miao, W Hu, N Guo, et al. High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios. Small, 11, 936-942(2015).

[17] H Fang, W Hu, P Wang, et al. Visible light-assisted high-performance mid-infrared photodetectors based on single InAs nanowire. Nano Letters, 16, 6416-6424(2016).

[18] X Zhang, H Huang, X Yao, et al. Ultrasensitive mid-wavelength infrared photodetection based on a single InAs nanowire. ACS Nano, 13, 3492-3499(2019).

[19] Y Yang, X Wang, C Wang, et al. Ferroelectric enhanced performance of a GeSn/Ge dual-nanowire photodetector. Nano Letters, 20, 3872-3879(2020).

[20] C Huang, Y Li, N Wang, et al. Progress in research into 2D graphdiyne-based materials. Chemical Reviews, 118, 7744-7803(2018).

[21] S Manzeli, D Ovchinnikov, D Pasquier, et al. 2D transition metal dichalcogenides. Nature Reviews Materials, 2, 17033(2017).

[22] Q H Wang, K Kalantar-Zadeh, A Kis, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnology, 7, 699-712(2012).

[23] L Tu, R Cao, X Wang, et al. Ultrasensitive negative capacitance phototransistors. Nature Communications, 11, 101(2020).

[24] S Sucharitakul, N J Goble, U R Kumar, et al. Intrinsic electron mobility exceeding 10³ cm²/(V s) in multilayer InSe FETs. Nano Letters, 15, 3815-3819(2015).

[25] F Wu, H Xia, H Sun, et al. AsP/InSe Van der Waals tunneling heterojunctions with ultrahigh reverse rectification ratio and high photosensitivity. Advanced Functional Materials, 29, 1900314(2019).

[26] L Liu, L Wu, A Wang, et al. Ferroelectric-gated InSe photodetectors with high on/off ratios and photoresponsivity. Nano Letters, 20, 6666-6673(2020).

[27] U Bockelmann, G Bastard. Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases. Physical Review B, 42, 8947-8951(1990).

[28] S Zhang, H Jiao, X Wang, et al. Highly sensitive InSb nanosheets infrared photodetector passivated by ferroelectric polymer. Advanced Functional Materials, 30, 2006156(2020).

[29] U Sassi, R Parret, S Nanot, et al. Graphene-based mid-infrared room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance. Nature Communications, 8, 14311(2017).

[30] X Wang, H Shen, Y Chen, et al. Multimechanism synergistic photodetectors with ultrabroad spectrum response from 375 nm to 10 μm. Advanced Science, 6, 1901050(2019).

[31] J-M Yan, J-S Ying, M-Y Yan, et al. Optoelectronic coincidence detection with two-dimensional Bi₂O₂Se ferroelectric field-effect transistors. Advanced Functional Materials, 31, 2103982(2021).

[32] J-W Chen, S-T Lo, S-C Ho, et al. A gate-free monolayer WSe₂ pn diode. Nature Communications, 9, 3147(2018).

[33] G Wu, B Tian, L Liu, et al. Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains. Nature Electronics, 3, 43-50(2020).

[34] G Wu, X Wang, Y Chen, et al. MoTe₂ p-n homojunctions defined by ferroelectric polarization. Advanced Materials, 32, 1907937(2020).

[35] Y Chen, X Wang, L Huang, et al. Ferroelectric-tuned van der Waals heterojunction with band alignment evolution. Nature Communications, 12, 4030(2021).