Fig. 1. Schematic diagram of laser dicing system
Fig. 2. Definition of kerf width and ablated zone
Fig. 3. Definition of affected zone width
Fig. 4. Change trend of dicing silicon under pure water. (a) Change trend of kerf width vs speed and frequency; (b) Change trend of ablated zone vs speed and frequency
Fig. 5. Optical image of the grooves on the rear side of silicon
Fig. 6. Surface of silicon diced under water. (a) Silicon surface impacted by bubbles collapse; (b) Enlarged optical image of area B; (c) The first enlarged optical image of area A; (d) The second enlarged optical image of area A
Fig. 7. Bubbles adhering on the surface of the silicon diced in different ethanol-water mixtures with ethanol in water of 0 wt.% (a), 2 wt.% (b), 3.5 wt.% (c), 5 wt.% (d)
Fig. 8. Optical images of front surface diced in different ethanol-water mixtures with ethanol in water of 0 wt.% (a), 2 wt.% (b), 3.5 wt.%(c), 5 wt.% (d)
Fig. 9. Optical images of rear surface diced in different ethanol-water mixtures with ethanol in water of 0 wt.% (a), 2 wt.% (b), 3.5 wt.% (c), 5 wt.% (d)
Fig. 10. Change trend of dicing silicon in ethanol solution. (a) Cut width (characterized by 'Kerf width + affected zone width') of polished surface of silicon vs ethanol concentration; (b) Cut width of non-polished surface of silicon vs vs ethanol concentration
Fig. 11. Morphology of rear surface diced with different ethanol concentrations. (a) 0 wt.%; (b) 2 wt.%
Fig. 12. Optical images of polished-surface of silicon diced with different ethanol concentrations. (a) 0 wt.%; (b) 2 wt.%
Fig. 13. Lateral side view of silicon diced with different ethanol concentrations. (a) 0 wt.%; (b) 2 wt.%; (c) 3.5 wt.%; (d) 5 wt.%
Fig. 14. Change line chart between depth and ethanol concentration
Fig. 15. Dynamics of laser-induced bubble. (a) In deionized water; (b) Under ethanol solution
Fig. 16. Relationship between pulse and bubbles. (a) Under pure water; (b) Under ethanol solution
Group | Auxiliary medium | Frequency/kHz | Scanning speed/mm·s−1 | Cut surface | Thickness of silicon wafer/μm | A | Deionized water | 10-50 | 1-3 | Polished surface | 200 | B | Ethanol solution | 30 | 1 | Polished surface | 200 | C | Ethanol solution | 30 | 1 | Non-polished surface | 200 | D | Ethanol solution | 30 | 1 | Polished surface | 400 |
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Table 1. Parameters of laser dicing process