• Journal of Semiconductors
  • Vol. 43, Issue 5, 050502 (2022)
Shun Tian, Chen Zou, Runchen Lai, Chungen Hsu..., Xuhui Cao, Shiyu Xing, Baodan Zhao and Dawei Di|Show fewer author(s)
Author Affiliations
  • State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
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    DOI: 10.1088/1674-4926/43/5/050502 Cite this Article
    Shun Tian, Chen Zou, Runchen Lai, Chungen Hsu, Xuhui Cao, Shiyu Xing, Baodan Zhao, Dawei Di. Additive and interfacial control for efficient perovskite light-emitting diodes with reduced trap densities[J]. Journal of Semiconductors, 2022, 43(5): 050502 Copy Citation Text show less
    (Color online) SCLC analyses for MCFPB and MCFPB-C perovskite films. Current–voltage characteristics of devices with structures of (a) ITO/NiOx/PVK/MCFPB/MoOx/Ag, (b) ITO/NiOx/PVK/MCFPB-C/MoOx/Ag, (c) ITO/NiOx/PVK/LiF/MCFPB/MoOx/Ag and (d) ITO/NiOx/PVK/LiF/MCFPB-C/MoOx/Ag.
    Fig. 1. (Color online) SCLC analyses for MCFPB and MCFPB-C perovskite films. Current–voltage characteristics of devices with structures of (a) ITO/NiOx/PVK/MCFPB/MoOx/Ag, (b) ITO/NiOx/PVK/MCFPB-C/MoOx/Ag, (c) ITO/NiOx/PVK/LiF/MCFPB/MoOx/Ag and (d) ITO/NiOx/PVK/LiF/MCFPB-C/MoOx/Ag.
    (Color online) Characterization of PeLEDs. (a) Device structure. (b) The energy levels of the device functional layer materials. (c) J–V–L and (e) EQE–J curves of devices based on ITO/NiOx/PVK/(with or without)LiF/MCFPB/TPBi/LiF/Al. (d) J–V–L and (f) EQE–J curves of devices based on ITO/NiOx/PVK/(with or without)LiF/MCFPB-C/TPBi/LiF/Al. Inset: a photograph of a working device. (g) Simulated power distribution of a PeLED with isotropic emitter orientation. The dashed lines divide the graph into four regions: (1) direction emission, (2) substrate mode, (3) waveguide mode, and (4) surface plasmon mode. (h) Fractional power distribution of different optical modes in PeLEDs as a function of perovskite layer thickness.
    Fig. 2. (Color online) Characterization of PeLEDs. (a) Device structure. (b) The energy levels of the device functional layer materials. (c) J–V–L and (e) EQE–J curves of devices based on ITO/NiOx/PVK/(with or without)LiF/MCFPB/TPBi/LiF/Al. (d) J–V–L and (f) EQE–J curves of devices based on ITO/NiOx/PVK/(with or without)LiF/MCFPB-C/TPBi/LiF/Al. Inset: a photograph of a working device. (g) Simulated power distribution of a PeLED with isotropic emitter orientation. The dashed lines divide the graph into four regions: (1) direction emission, (2) substrate mode, (3) waveguide mode, and (4) surface plasmon mode. (h) Fractional power distribution of different optical modes in PeLEDs as a function of perovskite layer thickness.
    Shun Tian, Chen Zou, Runchen Lai, Chungen Hsu, Xuhui Cao, Shiyu Xing, Baodan Zhao, Dawei Di. Additive and interfacial control for efficient perovskite light-emitting diodes with reduced trap densities[J]. Journal of Semiconductors, 2022, 43(5): 050502
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