Interface engineering yields efficient perovskite light-emitting diodes

Rashid Khan; Guangyi Shi; Wenjing Chen; Zhengguo Xiao; Liming Ding

doi:10.1088/1674-4926/44/12/120501

Journals >Journal of Semiconductors >Volume 44 >Issue 12 >Page 120501 > Article

Journal of Semiconductors
Vol. 44, Issue 12, 120501 (2023)

Interface engineering yields efficient perovskite light-emitting diodes

Rashid Khan¹, Guangyi Shi¹, Wenjing Chen¹, Zhengguo Xiao^1、*, and Liming Ding^2、**

Author Affiliations

¹Key Laboratory of Strongly-Coupled Quantum Matter Physics (CAS), Department of Physics, University of Science and Technology of China, Hefei 230026, China

²Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China

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DOI: 10.1088/1674-4926/44/12/120501 Cite this Article

Rashid Khan, Guangyi Shi, Wenjing Chen, Zhengguo Xiao, Liming Ding. Interface engineering yields efficient perovskite light-emitting diodes[J]. Journal of Semiconductors, 2023, 44(12): 120501 Copy Citation Text

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(Color online) (a) Fabrication of MAPbI3 films and post-treatments with alkylammonium iodides. (b) Chemical structures for ammonium salts. (c) Surface defects passivation with alkylammonium iodides. (d) XRD profiles for perovskite films before and after post-treatments. (e) PL spectra. Inset: perovskite films under UV light. (f) PLQYext. (g) TRPL analysis for the control and post-treated perovskite films.

Fig. 1. (Color online) (a) Fabrication of MAPbI₃ films and post-treatments with alkylammonium iodides. (b) Chemical structures for ammonium salts. (c) Surface defects passivation with alkylammonium iodides. (d) XRD profiles for perovskite films before and after post-treatments. (e) PL spectra. Inset: perovskite films under UV light. (f) PLQY_ext. (g) TRPL analysis for the control and post-treated perovskite films.

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(Color online) (a) The device structure. (b) EQE statistics for PeLEDs with post-treated films by using DAI solutions with different concentrations. (c) J−V curves. (d) EQE vs current density curves. (e) EQE statistics. (f) EL spectra for PeLEDs without and with post-treatments.

Fig. 2. (Color online) (a) The device structure. (b) EQE statistics for PeLEDs with post-treated films by using DAI solutions with different concentrations. (c) J−V curves. (d) EQE vs current density curves. (e) EQE statistics. (f) EL spectra for PeLEDs without and with post-treatments.

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Rashid Khan, Guangyi Shi, Wenjing Chen, Zhengguo Xiao, Liming Ding. Interface engineering yields efficient perovskite light-emitting diodes[J]. Journal of Semiconductors, 2023, 44(12): 120501

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