• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 4, 646 (2005)
[in Chinese]*, [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese]. The nanocrystalline silicon clusters form ed in thermally annealed a-Si:H films and the potolum inescence[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 646 Copy Citation Text show less
    References

    [1] Canham L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers [J].Appl. Phys. Lett., 1990, 57(10): 1046-1048.

    [3] Cullity B D, Stock S R. Elements of X-ray Diffraction [M]. New Jersey: Prentice-Hall, 2001.

    [4] Richter H, Wang Z P, Ley L. The one phono Rama-spectrum in microcrystalline silicon [J]. Solid State Commun.,1981, 39(5): 625 629.

    [in Chinese], [in Chinese], [in Chinese]. The nanocrystalline silicon clusters form ed in thermally annealed a-Si:H films and the potolum inescence[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 646
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