S. Dlimi, A. El kaaouachi, L. Limouny, B. A. Hammou. A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures[J]. Journal of Semiconductors, 2021, 42(5): 052001
- Journal of Semiconductors
- Vol. 42, Issue 5, 052001 (2021)
Fig. 1. Adjustment of conductivity dependence of temperature for 2D p-GaAs system sample for different carrier densities.
Fig. 2. ln(σ) as (a) T –1/2, (b) T –1/3 and (c) T –1 of the sample and linear fits where the prefactor σ0 is independent on temperature.
Fig. 3. Function lnW versus lnT for various densities.
Fig. 4. lnW as a function lnT and linear fits for both cases: T < T c and T > T c.
Fig. 5. The exponent p as a function of carrier densities.
Fig. 6. (a) Activation energy versus n p in the insulating phase. (b) Characteristic temperature for case of Efros-Shklovskii and Mott hopping.
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